Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystals

Аристов, В. В.; Шмытько, И. М.; Shulakov, E. V.

doi:10.1107/s0567739477001089

Cited by 35 publications

(1 citation statement)

References 11 publications

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“…16 Energy dispersive X-ray diffraction The X-ray diffraction measurements were carried out in the HEXBay laboratory of the chair for Crystallography and Structural Physics of the University Erlangen-N€ urnberg utilizing the white beam of a high energy X-ray tube with a tungsten target, a focal spot size of 0.6 Â 0.6 mm 2 , and a maximum acceleration voltage of 225 kV. The diffractometer was run in a defocused Laue setup ( Figure 1) similar to the 17. The divergence of the primary beam in the diffraction plane was restricted to a % 3 .…”

Section: Samplesmentioning

confidence: 99%

Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

Gröschel

Will

Bergmann

et al. 2014

Journal of Applied Physics

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Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy Annealed Czochralski Silicon wafers containing SiO x precipitates have been studied by high energy X-ray diffraction in a defocused Laue setup using a laboratory tungsten tube. The energy dispersive evaluation of the diffracted Bragg intensity of the 220 reflection within the framework of the statistical dynamical theory yields the static Debye-Waller factor E of the crystal, which gives access to the strain induced by the SiO x precipitates. The results are correlated with precipitate densities and sizes determined from transmission electron microscopy measurements of equivalent wafers. This allows for the determination of the constrained linear misfit e between precipitate and crystal lattice. For samples with octahedral precipitates the values ranging from e ¼ 0.39 (þ0.28/À0.12) to e ¼ 0.48 (þ0.34/À0.16) indicate that self-interstitials emitted into the matrix during precipitate growth contribute to the lattice strain. In this case, the expected value calculated from literature values is e ¼ 0.26 6 0.05. Further, the precise evaluation of Pendell€ osung oscillations in the diffracted Bragg intensity of as-grown wafers reveals a thermal Debye-Waller parameter for the 220 reflection B 220 (293 K) of 0.5582 6 0.0039 Å 2 for a structure factor based on spherically symmetric scattering contributions. V C 2014 AIP Publishing LLC. [http://dx.

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Section: Samplesmentioning

confidence: 99%

Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

Gröschel

Will

Bergmann

et al. 2014

Journal of Applied Physics

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Pendellösung Fringes in Synchrotron X-Ray Topographs of a Wedge-Shaped Silicon Crystal

Tuomi¹,

Tilli²,

Kelhä³

et al. 1978

Phys. Stat. Sol. (a)

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Pendellösung fringes in a silicon wedge crystal are observed in Laue transmission topographs taken with white synchrotron radiation. Fringe patterns in two spots are analyzed in detail with the aid of densitometer traces using dynamical theory of X‐ray diffraction. The nn̄n spot is shown to be a sum of the 111, 333, and 444 pendellösung fringe sets whereas the n̄3nn̄ spot has only one set of fringes due to 131 reflection. The fading of the 111 set with increasing thickness is determined by the anomalous absorption of the branch 2 wave‐field polarized parallel to the plane of incidence.

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Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

Olekhnovich

Karpei

Skidan

et al. 1982

phys. stat. sol. (a)

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Results of a study of thickness oscillations (Pendellösung beats) of the X‐ray integrated intensity for the symmetrical Laue case of silicon dislocation single crystals are presented over the temperature range from 100 to 295 K. The oscillation period is found to increase with the dislocation density and the reflection order. It is shown that the Debye temperature θM can be precisely determined by the temperature shift of the oscillation patterns for dislocation crystals. The value of θM, obtained from the temperature dependence of Pendellösung intensity beats for a real crystal agrees well with that for a perfect one.

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Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystals

Cited by 35 publications

References 11 publications

Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

Pendellösung Fringes in Synchrotron X-Ray Topographs of a Wedge-Shaped Silicon Crystal

Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

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