Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

Olekhnovich, N. M.; Karpei, A. L.; Skidan, V. M.; Puzenkova, L. D.

doi:10.1002/pssa.2210720204

phys. stat. sol. (a)

1982

DOI: 10.1002/pssa.2210720204

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Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

N. M. Olekhnovich

A. L. Karpei

V. M. Skidan

et al.

Abstract: Results of a study of thickness oscillations (Pendellösung beats) of the X‐ray integrated intensity for the symmetrical Laue case of silicon dislocation single crystals are presented over the temperature range from 100 to 295 K. The oscillation period is found to increase with the dislocation density and the reflection order. It is shown that the Debye temperature θM can be precisely determined by the temperature shift of the oscillation patterns for dislocation crystals. The value of θM, obtained from the tem… Show more

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1984

1992

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Cited by 3 publications

References 13 publications

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Dynamical effects of X-ray scattering in laue geometry for Si crystals with structure defects

Olekhnovich

Karpei

1984

Phys. Stat. Sol. (a)

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Results of an investigation of thickness oscillations of the X‐ray integrated intensity and anomalous transmission of plane‐polarized MoKα radiation in the Laue geometry for dislocation‐free silicon crystals containing oxygen are reported. The static Debye‐Waller factor (E = exp (—L)) and the absorption coefficient due to the diffuse scattering (μd) for the 111, 333, 444 and 555 reflections are determined. From the comparison of the experimental dependence of In E on h2 + k2 + l2 with the theoretical one it is concluded that the structure defects are clusters. Using the ratio L/μd the cluster radius is estimated. Its value is found to be unchanged or little decreased after crystal annealing, while the defect density in the clusters increases. The measured integrated intensity of the reflections is divided into coherent and diffuse components. An anomalous trensmission effect is found for the diffuse component.

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Dynamical effects of X-ray scattering in laue geometry for Si crystals with structure defects

Olekhnovich

Karpei

1984

Phys. Stat. Sol. (a)

Self Cite

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X-Ray Diffraction Investigation of Si Crystals with Randomly Distributed Microdefects by the Inclination Method

Voronkov¹,

Chukhovskii²,

Lomovtsev³

et al. 1992

Phys. Stat. Sol. (a)

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The results of systematic investigations of Si crystals having a random distribution of small (10 to 100 nm) structure inhomogeneities (microdefects) by measuring the dependence of the integral Laue reflection coefficient in the symmetrical case on the inclination angle Rh(α) by the inclination method are presented. The errors of the method of precise determination of the parameters of the defect structure are estimated. Problems of the influence of different factors associated with the nonideality of the experiment on the dependence Rh(α), the question about the optimal choice of experimental conditions, and the limits of the possibilities of determining defect structure parameters are considered.

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Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellösung Fringe Method

Sugita

Sugiyama

Iida

et al. 1987

Jpn. J. Appl. Phys.

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D b r i e m e n t d'ktrophysique Relativiste et d e Cosmologie O b m t o i r e , 92190 Meudon, France AbsImacL Slatting from the equations of motion obeyed by fields, as they result from general approximations [they are m!ia to be of the following form [k2n(k)]+ = 0, for quasi bosons, and a similar equation for quasifermions] a lagmgian formalism is derived and, accordingly, consewed quantities are obtained. Next these fields are quantized and general expressions for the main observables are derived. Statistical mechanics of quasiparlicles then follow via the use of covariant Wigner functions.

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Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

Cited by 3 publications

References 13 publications

Dynamical effects of X-ray scattering in laue geometry for Si crystals with structure defects

Dynamical effects of X-ray scattering in laue geometry for Si crystals with structure defects

X-Ray Diffraction Investigation of Si Crystals with Randomly Distributed Microdefects by the Inclination Method

Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellösung Fringe Method

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