2019
DOI: 10.1088/1361-6641/ab3158
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Dynamical formation and active control of persistent spin helices in III-V and II-VI quantum wells

Abstract: This review article summarizes recent developments related to the dynamical formation of persistent spin helices in GaAs-and CdTe-based heterostructures. We start with fundamental aspects of spin-orbit interaction in quantum wells, in particular the Dresselhaus and Rashba terms and their relation to the bulk and structural inversion asymmetries, respectively. In the regime of balanced interactions, their combined impact gives rise to the formation of the persistent spin helix, i.e., a regime where a unidirecti… Show more

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Cited by 11 publications
(3 citation statements)
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“…Ref. [134], see also a review [135], where the experimental data concerning the observation of the spin helix in the spin diffusion are given. Spatio-temporal spin noise is characterized by the correlation function [cf.…”
Section: Two Dimensional Systemsmentioning
confidence: 99%
“…Ref. [134], see also a review [135], where the experimental data concerning the observation of the spin helix in the spin diffusion are given. Spatio-temporal spin noise is characterized by the correlation function [cf.…”
Section: Two Dimensional Systemsmentioning
confidence: 99%
“…The effect of spin-orbit interaction on the electronic spin in the conduction band has been investigated in detail because of potential applications using the spin degree of freedom for information transfer [1][2][3][4][5]. In particular, the electron spin has been shown to exhibit precessions over long distances with limited losses caused by spin relaxation (the persistent spin helix) [6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Zero-field spin splitting of electron and hole subbands in semiconductors caused by spin-orbit (SO) interaction gives rise to a variety of exciting phenomena which are being explored for technological applications [1][2][3] . Examples are the intrinsic and intrinsic inverse spin Hall effects 4,5 , the spin-galvanic effect [6][7][8][9] and spin orientation by electric current 10,11 , persistent spin helices [12][13][14] , and the paradigmatic spin field-effect transistor 15,16 .…”
Section: Introductionmentioning
confidence: 99%