Dynamics of a charge‐controlled memristor in master–slave coupling

Isah, Aliyu; Nguetcho, Aurélien Serge Tchakoutio; Binczak, Stéphane; Bilbault, Jean-Marie

doi:10.1049/el.2019.3322

Cited by 16 publications

(10 citation statements)

References 14 publications

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“…To vividly visualize the effect of memristor asymmetry, we consider two identical RC cells shown in Figure 5, which is the simplified setup of the system in the work of Isah et al (2020b). The cells are labeled as cell-1 and cell-2 having potentials V 1 and V 2 , respectively, coupled together by a memristor M with its orientation as shown.…”

Section: Memristor Asymmetry From the Circuit Point Of Viewmentioning

confidence: 99%

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Polarity Reversal Effect of a Memristor From the Circuit Point of View and Insights Into the Memristor Fuse

et al. 2021

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As the memristor device is asymmetrical in nature, it is not a bilateral element like the resistor in terms of circuit functionality. Thus, it causes hindrance in some memristor-based applications such as in cellular nonlinear network neighborhood connections and in some application areas where its orientation is essentially expected to act as a bilateral circuit element reliable for bidirectional communication, for example, in signal and image processing or in electrical synapse devices. We introduce a memristor-based network for each purpose where we replace the conventional series resistances by memristors. The memristor asymmetry is described from the circuit point of view allowing us to observe its interaction within the network. Moreover, a memristor fuse is proposed in order to achieve the memristive effect with symmetry, which is formed basically by connecting two memristors antiserially. We, therefore, analyze the memristor fuse from its basic principle along with the theoretical analysis and then observe the response from the circuit point of view.

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Section: Memristor Asymmetry From the Circuit Point Of Viewmentioning

confidence: 99%

“…The history of a memristor marks its initial value in ohms, determined by the last amount of electric charge passed through it. However, it is reported in the work of Isah et al (2020b) and Chua (2015)that the initial memristance is unknown.…”

Section: Memristor Asymmetry From the Circuit Point Of Viewmentioning

confidence: 99%

Polarity Reversal Effect of a Memristor From the Circuit Point of View and Insights Into the Memristor Fuse

et al. 2021

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“…with q 0 = ∫ −∞ 0 i(τ)dτ is the initial charge crossed through the device previously [26], defining the memory effect of the memristor.…”

Section: Characteristics Of Hp Modelmentioning

confidence: 99%

“…From (4) one can see that

M false(q false) = R_{off}

for

x \leq 0

and

M false(q false) = R_{on}

for

x \geq 1

. Moreover, we can process

x false(t false)

with respect to the initial charge

q_{0}

and the charge scaling factor

q_{d}

x false(t false) = \frac{q false(t false)}{q_{d}} = \frac{1}{q_{d}} ()(, q_{0} + \int_{0}^{t} i false(τ false) d τ),

with

q_{0} = \int_{- normal∞}^{0} i false(τ false) d τ

is the initial charge crossed through the device previously [26], defining the memory effect of the memristor.…”

Section: Characteristics Of Hp Modelmentioning

confidence: 99%

“…Following the application idea in [24], we aim to propose a memristor‐based 2D‐CNN essential for image applications in which we could replace the linear resistors used in the coupling mode [25] by memristors. In [26], we studied the effect of initial charge

q_{0}

(corresponding to the memory effect of the memristor) on the system dynamics. This paper presents a more quantitative and qualitative description of the work, including the theoretical derivation by following a similar approach, that is, by restricting ourselves to a system of two cells.…”

Section: Introductionmentioning

confidence: 99%

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Memristor dynamics involved in cells communication for a 2D non‐linear network

Isah

Nguetcho

Binczak

et al. 2020

IET signal process.

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In this study, the authors consider a first step to apply memristor devices in a cellular non-linear network (CNN), where the advantages of the non-linearity, nanoscalability and memory effect could be taken into account to implement a 2D-CNN for signal and image processing-Memristors are used in the coupling mode to connect adjacent cells serially. They drive the analytical model describing the transmission of information from one cell to another via memristor, whose description in the ϕ-q plane is given, then improved to overcome the problem of discontinuities for some values of the charge q(t). The modified model is then chosen to be continued for all initial conditions and all parameters sets. Moreover, numerical simulations from SPICE and MATLAB software confirm the authors' analytical predictions.

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