Dynamics of all-optically switched magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya interaction

Cao, Aoneng; Hees, Youri L. W. van; Lavrijsen, Reinoud; Zhao, Weisheng; Koopmans, B.

doi:10.1103/physrevb.102.104412

Cited by 8 publications

(9 citation statements)

References 37 publications

(46 reference statements)

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“…However, for a growing number of experiments, as in Fig. 8, the model fails to provide an adequate description of the data, which often show an asymmetric behavior around the minimum velocity (Lavrijsen et al, 2015;Jué et al, 2016b;Lau et al, 2016;Soucaille et al, 2016;Pellegren, Lau, and Sokalski, 2017;Cao, Zhang et al, 2018;D.-Y. Kim et al, 2018;Shepley et al, 2018;Shahbazi et al, 2019), a local peak in velocity (Lavrijsen et al, 2015;Soucaille et al, 2016;Balk et al, 2017), or even a maximum in velocity in the creep regime (Vaňatka et al, 2015).…”

Section: A Creep Regimementioning

confidence: 99%

“…The maximum values of applied μ 0 H x instead depend on the strength of the DMI. In samples with a large DMI, inplane fields of up to 350 mT have been used (Hrabec et al, 2014;Lavrijsen et al, 2015;Cao, Zhang et al, 2018). However, since the use of in-plane fields can be accompanied by artifacts (for example, misalignments of the fields and crosstalk between perpendicular and in-plane electromagnets might be present), measuring large DMI values can be problematic.…”

Section: Field-driven Domain-wall Motionmentioning

confidence: 99%

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Measuring interfacial Dzyaloshinskii-Moriya interaction in ultrathin magnetic films

et al. 2023

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The Dzyaloshinskii-Moriya interaction (DMI), one of the origins of chiral magnetism, is currently attracting considerable attention in the research community focusing on applied magnetism and spintronics. For future applications, an accurate measurement of its strength is indispensable. Here the state of the art of measurement techniques involving the coefficient of the Dzyaloshinskii-Moriya interaction, the DMI constant D, is reviewed, with a focus on systems where the interaction arises from the interface between two materials (i.e., the interfacial DMI). An overview of the experimental techniques, as well as their theoretical background and models for the quantification of the DMI constant, is given. The measurement techniques are divided into three categories: (a) domain-wall-based measurements, (b) spin-wave-based measurements, and (c) spin-orbit torque-based measurements. The advantages and disadvantages of each method are analyzed, and D values at different interfaces are compared. The review aims to obtain a better understanding of the applicability of the different techniques to various stacks and of the origin of apparent disagreements among literature values.

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Section: A Creep Regimementioning

confidence: 99%

Section: Field-driven Domain-wall Motionmentioning

confidence: 99%

Measuring interfacial Dzyaloshinskii-Moriya interaction in ultrathin magnetic films

et al. 2023

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“…Furthermore, inherent Dzyaloshinskii-Moriya interaction (DMI) can be expected in Pt/Co/Gd or Pt/Co/GdO x based on heavy metal (HM)/FM/ oxide layer structure. [38][39][40] Thus, symmetry breaking due to the coexisting PMA and IMA within Pt/Co/Gd/GdO x multilayers with inherent DMI could provide an opportunity for facile generations of skyrmions or bubble domains.…”

Section: Asymmetric Time-dependent Ma Changes Under Negative and Posi...mentioning

confidence: 99%

Electrical Manipulation of Oxygen Ion Migrations for the Voltage‐Controlled Adjustment of Magnetic Anisotropy and Optimized Skyrmion Generations

Tran

Yang

Kim

et al. 2022

Adv Elect Materials

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recognized that many different mechanisms are implementable, hence the modulation of carrier density, [1][2][3][4] piezoelectric strain effect, [5][6][7][8][9] exchange coupling, [10][11][12][13] orbital reconstruction, [14][15][16][17] and electrochemical effect [18][19][20] in various magnetoelectric coupling systems, consisting of an ferromagnet (FM), antiferromagnet (AFM), as well as ferroelectric (FE) materials in the thin film structures have been actively investigated. It is also noted that the relevant magnetic properties manipulated by VCMA include magnetization, magnetoresistance (MR), magnetic anisotropy (MA), coercivity (H C ), exchange bias field (H E ), and curie temperature (T C ), and the impact of VCMA technology in the application of magnetic material can be broadly extended to many areas. In the present article, we demonstrate that a transformation of magnetic anisotropy can be achieved at room temperature by electro-chemical effect at the interface between Co layer and Gd layer based on voltage-driven O 2− ion migrations within the amorphous Gd-O layer in Pt/Co/Gd/ GdO x /Pt multilayers structure. As the ion migration can be bidirectional depending on the polarity of applied voltage, magnetic anisotropy of the Co film could be reversibly transformed between perpendicular magnetic anisotropy (PMA) and inplane magnetic anisotropy (IMA). Unlike the recently reported VCMA results realized by the ionic migration mechanism accompanied with fully oxidation of FM metal layer, [18,19,21] present work here reports a large modulation in MA (≈4500 fJ/Vm) of the FM layer at room temperature without fully oxidizing the atoms in FM layer, thereby there is no need to sacrifice the magnetization. Change of MA is mainly from an induced PMA in the transition metal/oxide interface with the interfacial hybridization of transition metal and oxygen. [22][23][24] In order to further explore the MA control, domain morphology in FM was also examined. Many recent studies reported that skyrmions can be set in PMA films with stripe domain morphology by appropriately adjusting their MA and the domain widths via applications of external magnetic field [25,26] combined with thermal assistances. [27,28] Recent attentions to skyrmions are not only for a fundamental understanding of their topological With the prospect of energy-efficient spintronics by voltage-controlled magnetic anisotropy (VCMA), various mechanisms are investigated involving electron orbital state modulations for enhanced spin-orbit interactions, couplings with piezoelectric strain, and electrochemical effect at the interface within diverse magnetoelectric coupled material systems. In the present work, chemistry and spatial distributions of atoms are fine-tuned at the interface between ferromagnetic Co and partially oxidized Gd layers via voltage-controlled ion migrations, achieving highly sensitive and stable VCMA operations. With combined actions of chemical diffusion and electrical driving of oxygen through amorphous Gd layer, asymmetric electrical adjustm...

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“…In other words, the elastic pressure on the domain wall, which is proportional to the derivative of the domain-wall length to its position, is very high at such sharp features and may lead to a domain-wall motion, possibly facilitated by the transiently higher temperature shortly after the laser pulse, or by creep motion of the domain wall at longer times after the pulse. Such a creep motion of sharp domain ends has been studied in detail by Cao et al in Co/Gd stacks sandwiched by Pt or Ta [ 22 ].…”

Section: Resultsmentioning

confidence: 99%

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

Hosseinifar¹,

Golias²,

Kumberg³

et al. 2022

Beilstein J. Nanotechnol.

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We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd26Fe74 film with out-of-plane easy axis of magnetization by X-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sample magnetization, independent of the magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at features with sharp tips. These features appear after the optical switching at positions where the line of constant threshold fluence in the Gaussian footprint of the laser pulse comes close to an already existing domain wall. On the other hand, we identify the presence of laser-induced domain-wall motion in the toggle-switching event as a further cause for local deviations from purely deterministic toggle switching.

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Dynamics of all-optically switched magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya interaction

Cited by 8 publications

References 37 publications

Measuring interfacial Dzyaloshinskii-Moriya interaction in ultrathin magnetic films

Measuring interfacial Dzyaloshinskii-Moriya interaction in ultrathin magnetic films

Electrical Manipulation of Oxygen Ion Migrations for the Voltage‐Controlled Adjustment of Magnetic Anisotropy and Optimized Skyrmion Generations

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

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