Ever since its discovery around a decade ago, all-optical magnetization switching (AOS) using femtosecond laser pulses has shown potential for future data storage and logic devices. In particular, single pulse helicity independent AOS in certain ferrimagnetic alloys and multilayers is highly efficient and ultrafast. However, in most cases it is a toggle mechanism, which is not desirable for applications. Here we experimentally demonstrate conversion from toggle switching to a deterministic mechanism by biasing AOS in a Co/Gd bilayer with a spin polarized current which is optically generated in an adjacent ferromagnetic reference layer. We show deterministic writing of an 'up' and 'down' state using a sequence of one or two pulses, respectively, and demonstrate the non-local origin by varying the magnitude of the generated spin current. Our demonstration of deterministic magnetization writing could provide an essential step towards the implementation of future optically addressable spintronic memory devices.

All-optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain optimized tunnel magnetoresistance (TMR) ratio. However, with integrating AOS with an MTJ in prospect, the annealing effects on single-pulse AOS and domain wall (DW) dynamics in the Pt/Co/Gd stacks haven't been systematically investigated yet. In this study, we experimentally explore the annealing effect on AOS and field-induced DW motion in Pt/Co/Gd stacks. The results show that the threshold fluence (𝐹 0 ) for AOS is reduced significantly as a function of annealing temperature (𝑇 𝑎 ) ranging from 100℃ to 300℃. Specifically, a 28% reduction of 𝐹 0 can be observed upon annealing at 300℃, which is a critical 𝑇 𝑎 for MTJ fabrication.Lastly, we also demonstrate a significant increase of the DW velocity in the creep regime upon annealing, which is attributed to annealing-induced Co/Gd interface intermixing. Our findings show that annealed Pt/Co/Gd system facilitates ultrafast and energy-efficient AOS, as well as enhanced DW velocity, which is highly suitable towards opto-spintronic memory applications.

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet. Applied Physics Letters, 119(25), [252402].

Significance Spintronic devices have become promising candidates for next-generation memory architecture. However, state-of-the-art devices, such as perpendicular magnetic tunnel junctions (MTJs), are still fundamentally constrained by a subnanosecond speed limitation, which has remained a long-lasting scientific obstacle in the ultrafast spintronics field. The highlight of our work is the demonstration of an optospintronic tunnel junction, an all-optical MTJ device which emerges as a new category of integrated photonic–spintronic memory. We demonstrate 1) laser-induced deterministic and efficient writing by an all-optical approach and electrical readout by tunnel magnetoresistance, 2) writing speed within 10 ps, demonstrated by femtosecond-resolved measurements, and 3) integration with state-of-the-art MTJ performance and a complementary metal–oxide–semiconductor-compatible fabrication progress.

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