Dynamics of carrier-capture processes in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><

Dreybrodt, J.; Daiminger, Franz X.; Reithmaier, J.P.; Forchel, A.

doi:10.1103/physrevb.51.4657

Cited by 30 publications

(9 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It is assumed that the radiative lifetime in Eq. (2) does not change with the barrier layer thickness 9 and, thus, the surface state density does not have an effect on the radiative lifetime. Therefore, the non-radiative lifetime in Eq.…”

Section: Resultsmentioning

confidence: 95%

“…One earlier model suggests that the lifetime can be calculated from the barrier layer thickness assuming that non-radiative recombination occurs within a trapping layer determined by the occupation probability of the electrons in this layer. 9 In this model the probability is the square of the wave function integrated over the trapping layer thickness. In a simple one dimensional case the wave function in the barrier layer is exponentially decaying, and therefore, also the probability function can be expressed in the form of an exponentially decaying function.…”

Section: Resultsmentioning

confidence: 99%

“…In a simple one dimensional case the wave function in the barrier layer is exponentially decaying, and therefore, also the probability function can be expressed in the form of an exponentially decaying function. Combining this with the earlier derived model for the lifetime, 9 the charge carrier lifetime can be written using Eq. (4) as…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Mattila

Bosund

Huhtio

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films J. Vac. Sci. Technol. A 33, 01A111 (2015); 10.1116/1.4898434Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation J. Appl. Phys. 114, 144509 (2013) Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 C and effective passivation is still achieved. Samples passivated by AlN fabricated at 150 C show four times higher photoluminescence intensity and longer time-resolved photoluminescence lifetime than ammonia plasma passivated samples. The passivation effect is shown to last for months. The dependence of charge carrier lifetime and integrated photoluminescence intensity on AlN layer thickness is studied using an exponential model to describe the tunneling probability from the near-surface quantum well to the GaAs surface. V C 2012 American Institute of Physics.

show abstract

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Mattila

Bosund

Huhtio

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…A few experiments have been done on quantum wells close to the interface semiconductor/air [20][21][22][23][24]. In GaAs/GaAlAs quantum wells, Moison et al [20] observed a dramatic decrease in luminescence intensity and a red shift of the luminescence line when the top barrier thickness was reduced (see Fig.…”

Section: Quantum Wellmentioning

confidence: 99%

“…Numerous experimental studies have been done either with fluorescent ions or dye moleculeS [12][13][14][15][16][17]. In semiconductor physics the effect of a cavity on the rate of spontaneous emission of a quantum well was recognized recently [18,19], and during the last years, only a few studies have been done on the effect of a dielectric environment [4] or a close interface [20][21][22][23][24] on the optical properties of nanostructures. There is, to our knowledge, no comprehensive review of all the situatioms in which the spontaneous emission of a nanocrystal (NC) or a quantum well (QW) is modifued by its environment.…”

Section: Introductionmentioning

confidence: 99%

Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface

Lavallard

1996

Acta Phys. Pol. A

View full text Add to dashboard Cite

We review several situations in which the emission rate of a nanostructure is modified by its environment. We first consider smaJl objects embedded in media with different refractive indices. The local electromagnetic field and the rate of spontaneous emission of the nanostructure are enhanced or inhibited by the induced dipole charges on the interface. In quantum wells or nanocrystals embedded in a low dielectric constant medium, the binding energy of excitons is increased. In anisotropic microcrystals, the local field is anisotropic and emission of light is polarized. We consider especially the case of p+-doped porous silicon in which nanocrystals are elongated. Another interesting situation occurs when a dipole is in the vicinity of a dielectric interface. The local field acting on the dipole results from the interferences of incident and reflected beams. Contributions from evanescent waves are important when the dipole is located in the medium of low refractive index, very close to the surface. The intensity of emission and its pattern are modified by the vicinity of the dielectric interface. Close to the interface semiconductor/air, the exciton binding energy is increased. In the vicinity of a metallic surface, á nonradiative transfer to the metal occurs for small distances of the nano-object or quantum weJl to the surface and the quantum efficiency varies with the distance to the metallic surface. The exciton binding energy of a quantum well is decreased close to a metallic surface.PACS numbers: 78.20.Βh, 78.55.Cr, 78.55.Et 1. Introduction The rate of spontaneous emission of a dipole is not an intrinsic property of the dipole but depends on its environment [1]: dielectric medium [2-5], dielectric interface [6][7][8], metallic interface [9,10] or cavity [11]. The modification of the emission rate of a dipole has been studied theoretically for many years. Numerous experimental studies have been done either with fluorescent ions or dye moleculeS [12][13][14][15][16][17]. In semiconductor physics the effect of a cavity on the rate of spontaneous emission of a quantum well was recognized recently [18,19], and during the last years, only a few studies have been done on the effect of a dielectric

show abstract

Recent Developments

Shah¹

1999

Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

View full text Add to dashboard Cite

Dynamics of carrier-capture processes inGaxIn1−<

Cited by 30 publications

References 14 publications

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface

Recent Developments

Contact Info

Product

Resources

About