Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films

Zhang, Pengzhan; Chen, Kunji; Lin, Zewen; Tan, Dameng; Dong, Hengping; Li, Wei; Xu, Jun; Huang, Xinfan

doi:10.1063/1.4944056

Cited by 15 publications

(13 citation statements)

References 26 publications

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“…Moreover, for analyzing the recombination processes of the photo-excited carriers, we also found the different characteristics between O-type a-SiO x N y and N-type a-SiN x O y samples. Zhang et al [66] reported the temporal evolution trace of transient PL spectral profiles from nanosecond TRPL measurements. Figures 9A,B record the decay of TRPL intensity as a function of specific delay time at the emission wavelength of 474 nm in a-SiN x O y sample, under 8 and 300 K, respectively.…”

Section: Characteristics Of Band Tail States and Defect States Dominamentioning

confidence: 99%

“…The PL internal quantum efficiency (PL IQE) has reached as high as 60% at the emission wavelength of 470 nm [53]. This higher PL IQE can be explained by the fast radiative recombination rate of excited carriers via the N-Si-O defect states [66]. The faster recombination rate of 10 8 s −1 in our a-SiN x O y films can be comparable to those with direct band gap, e.g., CdSe NCs, reported by Donega et al [67].…”

Section: Improved Optical Properties In N-type A-sin X O Y Filmsmentioning

confidence: 99%

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Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs, the research efforts on the optoelectronic applications of these materials have been continually increasing, particularly in the study of light emission properties and recombination mechanisms. In this paper, we first briefly outline the present photoluminescence (PL) mechanisms in amorphous silicon oxynitride (a-SiO x N y) films. Since, the PL properties and recombination processes are affected by both structural disorder and chemical disorder, the PL mechanism has been still unclear and even controversial until now. Among these various PL recombination models, the band tail states and defect state models have gained general consensus. Recently, a N-Si-O bond defect model has been reported, which depends on relative atom concentration of oxygen and nitrogen in the silicon oxynitride materials. It has been revealed that oxygen bonding plays a key role, not only in reducing the structural disorder, but also in creating N-Si-O (N x) defect states in the band gap. The characteristics of two models, namely band tail and N-Si-O bond defects, have been discussed in detail. Finally, it has been shown that by controlling the chemical composition of these non-stoichiometric silicon oxynitride materials, the optical and electronic properties can be improved. Keywords: amorphous silicon oxynitride (a-SiN x O y), PL mechanism, band tail model, N-Si-O bond defect model, a-SiN x O y LED

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Section: Characteristics Of Band Tail States and Defect States Dominamentioning

confidence: 99%

Section: Improved Optical Properties In N-type A-sin X O Y Filmsmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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“…In our previous studies, we have reported the properties of oxygen‐induced strong PL and tunable PL from red to blue in a‐SiN x O y films . Recently, the PL internal quantum efficiency as high as 60% has been achieved .…”

Section: Introductionmentioning

confidence: 99%

The Role of N–Si–O Defect States in Optical Gain from an a‐SiN_xO_y/SiO₂ Waveguide and in Light Emission from an n‐a‐SiN_xO_y/p‐Si Heterojunction LED

Lin

Chen

Zhang

et al. 2018

Physica Status Solidi (a)

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Amorphous silicon oxynitride (a-SiN x O y ) film is a kind of new luminescent material, which exhibits highly efficient light emission from luminescent N-Si-O defect states. In this work, the measurements of steady-state photoluminescence (SSPL), temperature-dependent photoluminescence (TDPL), and nanosecond time-resolved photoluminescence (ns-TRPL) are combined to further verify the role of luminescent N-Si-O defect states on the performance of photoluminescence (PL), electro-luminescence (EL), and optical gain, etc., for both intrinsic and doped a-SiN x O y films. The results indicate that both PL and EL originate from luminescent N-Si-O defect states, which is totally different behavior from that observed from band tail states in normal amorphous semiconductors. In the case of device applications, the properties of optical gain in an a-SiN x O y / SiO 2 waveguide are investigated. Based on the signal of amplified spontaneous emission (ASE) coming from the edge of the waveguide, an optical gain coefficient higher than 100 cm À1 is obtained by using variable stripe length (VSL) measurements. For another application example, it is found that radiative recombination via luminescent N-Si-O defect states can also contribute to the EL observed from an n-a-SiN x O y /p-Si heterojunction LED, in which the light emission power efficiency is determined to be five times higher than that in an a-SiN x O y MIS LED.

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“…However, silicon is not a suitable luminescent material, and its indirect band gap limits light emission efficiency. Therefore, Si-based luminescent materials (including Si alloys and nanostructured Si) have been actively investigated over the last two decades, with an interest in improving the PL external quantum efficiency (PL EQE, or called PL quantum yield, PL QY) and internal quantum efficiency (PL IQE), and understanding the radiative recombination mechanisms of the light emission [4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22].…”

Section: Introductionmentioning

confidence: 99%

Tunable Luminescent A-SiNxOy Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

Zhang

et al. 2018

Materials

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In this work, we systematically investigated the Nx bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiNxOy) systems. The luminescent N‒Si‒O bonding-related defect states were checked for the XPS, EPR, and temperature-dependent steady-state PL (TD-SSPL) properties. The PL IQEs were calculated from PL quantum yields through the principle of planar geometry optics, and then confirmed by the TD-SSPL properties. The radiative recombination rates [kr(R)] were determined by combining the PL IQE values and ns-PL lifetimes obtained from time-resolved PL measurements. Both the PL IQE, exceeding 72%, and the fast kr(R) (~108 s−1) are proportional to the concentration of Nx defects, which can be explained by N‒Si‒O bonding states related to the quasi-three-level model, suggesting the possible realization of stimulated light emission in a-SiNxOy systems.

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Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films

Cited by 15 publications

References 26 publications

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

The Role of N–Si–O Defect States in Optical Gain from an a‐SiN_xO_y/SiO₂ Waveguide and in Light Emission from an n‐a‐SiN_xO_y/p‐Si Heterojunction LED

Tunable Luminescent A-SiNxOy Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

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Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films

Cited by 15 publications

References 26 publications

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

The Role of N–Si–O Defect States in Optical Gain from an a‐SiNxOy/SiO2 Waveguide and in Light Emission from an n‐a‐SiNxOy/p‐Si Heterojunction LED

Tunable Luminescent A-SiNxOy Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

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The Role of N–Si–O Defect States in Optical Gain from an a‐SiN_xO_y/SiO₂ Waveguide and in Light Emission from an n‐a‐SiN_xO_y/p‐Si Heterojunction LED