Dynamics of reversible optical properties switching of Ge2Sb2Te5 thin films at laser-induced phase transitions

Киселев, А. В.; Ionin, V.V.; Burtsev, A.A.; Eliseev, N. N.; Mikhalevsky, V. A.; Архарова, Н. А.; Хмеленин, Д. Н.; Lotin, A. A.

doi:10.1016/j.optlastec.2021.107701

Cited by 15 publications

(1 citation statement)

References 25 publications

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“…A drawback of this method is that deposition and irradiation must be repeated several times to obtain an emissivity value of >0.6. It is noteworthy that for the planar GST cavity structure, the GST thickness required to exhibit an emission peak in the atmospheric window range is 400–450 nm. ,, However, ordinary lasers operating at near-IR, visible, and ultraviolet (UV) wavelengths cannot entirely crystallize such thick films because their penetration depth into GST is <100 nm. ,− Therefore, thin GST layers were consecutively deposited to achieve the required GST thickness and each layer was irradiated. As this method entails a long processing time, a facile approach is highly desirable from a practical perspective.…”

Section: Introductionmentioning

confidence: 99%

Laser Dynamic Control of the Thermal Emissivity of a Planar Cavity Structure Based on a Phase-Change Material

Kang,

Kim,

Lee

2024

ACS Appl. Mater. Interfaces

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Tailoring the thermal emission of a material in the long-wave infrared (IR) range of 8–13 μm is crucial for many IR-adaptive applications, including personal thermal management, IR camouflage, and radiative cooling. Although various materials and surface structures have been proposed for these purposes, space-selective and dynamic control of their emissivity is challenging. In this study, we present a planar surface cavity structure consisting of a Ge2Sb2Te5 (GST) film on top of a thin metal reflector to modulate its emissivity by using an ultraviolet laser beam. A laser-induced phase change in GST allowed for the local control of emissivity. The average emissivity in the long-wave IR range was tunable from 0.15 to 0.77 simply by changing the laser energy deposited on the GST film. This enabled the laser printing of high-contrast emissivity patterns, which were erasable by subsequent thermal annealing. Emissivity-modulated GST cavities could be fabricated on not only rigid substrates but also flexible plastic substrates such as polyimide. The GST surface cavity was highly flexible and remained stable upon repeated bending to a curvature radius of 0.5 cm. This study provides a promising route for realizing scalable and flexible thermal emitters with tunable surface emissivity.

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Section: Introductionmentioning

confidence: 99%

Laser Dynamic Control of the Thermal Emissivity of a Planar Cavity Structure Based on a Phase-Change Material

Kang,

Kim,

Lee

2024

ACS Appl. Mater. Interfaces

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Optically Tunable Ultrafast Broadband Terahertz Polarimetric Device Using Nonvolatile Phase‐Change Material

Lai,

Gou,

et al. 2024

Laser & Photonics Reviews

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Actively tunable ultrafast broadband terahertz (THz) polarimetry using a reconfigurable phase‐change material holds great potentials and prospects for the achievement of next‐generation versatile integrated THz components and systems in a variety of THz applications. Here, an optically tunable ultrafast broadband THz polarimetric device (THz‐PoD) composed of a phase‐change material Ge2Sb2Te5 (GST) and a thin mica substrate is demonstrated. This proposed novel THz‐PoD is verified for a frequency range of 0.1–2.5 THz, exhibiting broadband and ultrafast determination of polarization states for linearly polarized THz waves at polarization angles from −90° to 90°. It is shown that optical excitation with ns pulses allows easy and efficient control of the polarimetric properties of such THz‐PoD. The essential role of the GST film in switching the phase transition between the amorphous and crystalline phases is emphasized by the theoretical investigation of the optically tunable ultrafast polarimetric mechanism of the device. This phase transition allows optically changing the THz‐PoD's properties by ns‐pulsed laser in a controlled way to achieve THz polarimetry for linearly polarized THz waves. The combined advantages of this strategy can open up a new and promising way for realizing versatile reconfigurable and integrated THz devices, which may further promote the development of novel THz systems and applications.

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Controlled Optical Contrast Caused by Reversible Laser-Induced Phase Transitions in GeTe and Ge2Sb2Te5 Thin Films in the Spectral Range from 500 to 20,000 nm

Burtsev,

Kiselev,

Ionin

et al. 2023

J Russ Laser Res

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Dynamics of reversible optical properties switching of Ge2Sb2Te5 thin films at laser-induced phase transitions

Cited by 15 publications

References 25 publications

Laser Dynamic Control of the Thermal Emissivity of a Planar Cavity Structure Based on a Phase-Change Material

Laser Dynamic Control of the Thermal Emissivity of a Planar Cavity Structure Based on a Phase-Change Material

Optically Tunable Ultrafast Broadband Terahertz Polarimetric Device Using Nonvolatile Phase‐Change Material

Controlled Optical Contrast Caused by Reversible Laser-Induced Phase Transitions in GeTe and Ge2Sb2Te5 Thin Films in the Spectral Range from 500 to 20,000 nm

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