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This paper presents the results of a study on the structural properties and dynamics of conductivity of thin (d ∼ 100 nm) films of germanium telluride depending on the phase states reversibly switched by nanosecond pulsed laser radiation with a «top hat» beam profile. It was determined that the threshold of laser radiation energy density at which the phase transition in GeTe thin films from the amorphous to crystalline state is in the range of E = 7.5 ÷ 47.6 mJ/cm2, and the threshold for the reverse transition from the crystalline to amorphous state starts from 47.6 mJ/cm2 and is observed up to 90 mJ/cm2 with no visible damage caused by the ablation. The full time of conductivity change associated with the phase transition between the amorphous and crystalline phases is τCA = 20.2 ns, while for the reverse crystalline to amorphous transition, the conductivity full change time it makes τAC = 52 ns.

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This paper presents the results of an experimental study, implementation, and numerical simulation of the transmissivity of a polymer waveguide covered by a GST225 thin film with various phase states. The paper considers an optical synapse prototype based on the interface between the waveguide and an optically controlled GST225 film. We demonstrate the fundamental possibility of controlling an optical signal in the telecommunication C-range as it passes through the synaptic interface via the action of an external laser on an optically active GST225 film. Experimentally, 40% single- and multi-level modulations of the optical signal intensity are achieved. The numerical simulation results are in line with the experimental data. Based on this principle, next-generation all-optical storage and computing devices that simulate the properties of biological synapses and neurons can be developed.