2018
DOI: 10.1016/j.jmmm.2017.12.028
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Dynamics of the stress-mediated magnetoelectric memory cell N×(TbCo2/FeCo)/PMN-PT

Abstract: Stress-mediated magnetoelectric heterostructures represent a very promising approach for the realization of ultra-low energy Random Access Memories. The magnetoelectric writing of information has been extensively studied in the past, but it was demontrated only recently that the magnetoelectric effect can also provide means for reading the stored information. We hereby theoretically study the dynamic behaviour of a magnetoelectric random access memory cell (MELRAM) typically composed of a magnetostrictive mult… Show more

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Cited by 13 publications
(7 citation statements)
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“…The calculated energy consumption for writing and reading operations was found equal to E =13 aJ/bit. This value is close to the previously calculated one, based on the model of the effective magnetoelectric medium [13] and is much lower than E = 6 fJ/bit, recently obtained experimentally in a MTJ-RAM of comparable size [16]. The stability of the equilibrium magnetic states "0" and "1" over time is ensured by the energetic barrier , where v is the volume of the cell [11].…”
Section: Resultssupporting
confidence: 86%
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“…The calculated energy consumption for writing and reading operations was found equal to E =13 aJ/bit. This value is close to the previously calculated one, based on the model of the effective magnetoelectric medium [13] and is much lower than E = 6 fJ/bit, recently obtained experimentally in a MTJ-RAM of comparable size [16]. The stability of the equilibrium magnetic states "0" and "1" over time is ensured by the energetic barrier , where v is the volume of the cell [11].…”
Section: Resultssupporting
confidence: 86%
“…For the description of the MELRAM dynamics we follow approach developed in [13]. The magnetization switch under electric tension is described by Landau-Lifshitz-Gilbert (LLG) equation:…”
Section: Dynamic Model Of the Melram Cellmentioning
confidence: 99%
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“…The FM/NM and FM/FM structures with in-plane anisotropy are used as spintronic THz emitters [19,20]. The FM/FM structures, such as TbCo 2 /FeCo multilayers with in-plane anisotropy are very prospective for creation of magnetoelectric random access memory (MELRAM) with ultra-low energy consumption about a few attojoule per bit [21]. The principle of operation of such devices is based on spin reorientation transitions (SRT) in the magnetic constituent, induced by short strain pulses generated by piezoelectric constituent elastically coupled with the structure.…”
Section: Introductionmentioning
confidence: 99%