1976
DOI: 10.1061/jsdeag.0004357
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Earthquake Behavior of Suspended-Floor Buildings

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Cited by 36 publications
(28 citation statements)
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“…A key element in this study is the flexibility of the pillars. Using beam theory, one obtains a linear relation between the pillar deflection x and a horizontal point force F x applied at the end of the pillar as was validated experimentally by Papadopoulos et al Thus, the pillars react to a horizontal end load as a linear spring with a spring constant of . Here, the Young’s modulus of the PDMS substrate, E = 0.54 ± 0.04 MPa, was determined using a home-built indenter system in which a 2 mm radius ruby sphere was used as an indenter.…”
Section: Methodsmentioning
confidence: 85%
“…A key element in this study is the flexibility of the pillars. Using beam theory, one obtains a linear relation between the pillar deflection x and a horizontal point force F x applied at the end of the pillar as was validated experimentally by Papadopoulos et al Thus, the pillars react to a horizontal end load as a linear spring with a spring constant of . Here, the Young’s modulus of the PDMS substrate, E = 0.54 ± 0.04 MPa, was determined using a home-built indenter system in which a 2 mm radius ruby sphere was used as an indenter.…”
Section: Methodsmentioning
confidence: 85%
“…Unlike simple bending, shearing stresses are generated along the plane perpendicular to the long axis (or parallel to the twisting plane) when a crystal is twisted. , Thus, the shear modulus ( G ) of the (010) plane was calculated for form II to evaluate its ability against molecular slippage under shear stress . The G value (0.282 GPa) is approximately 13% of that of another reported twistable CRY-G crystal ( G = 2.2 GPa), indicating lower resistance against shearing stress at the twisting plane.…”
Section: Resultsmentioning
confidence: 99%
“…[92,93] UTCs may experience different types of deformation such as shearing, torsion, tension, or compression, which can be quantified in terms of stress in a uniaxial or biaxial geometry. [94] The first geometry considers that the device bends in just one direction, whereas the second geometry considers that the device bends in both orthogonal directions normally occurring when there is an elastic anisotropy or an applied constraint.…”
Section: Flexible Ultra-thin Isfets-on-semiconductorsmentioning
confidence: 99%