EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon

Tüzün, Ö.; Auger, Jean-Marc; Gordon, Ivan; Focsa, A.; Montgomery, P.C.; Maurice, Claire; Slaoui, A.; Beaucarne, G.; Poortmans, Jef

doi:10.1016/j.tsf.2007.12.105

Cited by 23 publications

(7 citation statements)

References 17 publications

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“…Therefore, both techniques and mechanisms for controlling the crystal orientation have been well studied in the Si-Al system [25,100,140]. The following four parameters influence the crystal orientation: (i) initial thickness of Al (figure 8(a)) [66,139], (ii) annealing temperature (figure 8(a)) [139,141], (iii) thickness and material of the interlayer between Si/Al (figure 8(b)) [129,137,142] and (iv) substrate (underlying) material and its surface condition (figure 8(c)) [143][144][145][146][147]. In particular, the Al thickness and underlying material have a large influence: thick Al (>100 nm) provides the (100) orientation [148,149], while thin Al (<100 nm) provides the crystal orientation depending on the underlying material, such as (111) for SiO 2 and (100) for ZnO:Al (figure 8(c)).…”

Section: Grain Size Controlmentioning

confidence: 99%

Metal-induced layer exchange of group IV materials

Toko

Suemasu

2020

J. Phys. D: Appl. Phys.

108

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Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor layers exchange during heat treatment. A great deal of effort has been put into research on the mechanism and applications of LE, which has allowed various group IV materials (Si, SiGe, Ge, GeSn and C) to form on arbitrary substrates using appropriate metal catalysts. Depending on the LE material combination and growth conditions, the resulting semiconductor layer exhibits various features: low-temperature crystallization (80 °C–500 °C), grain size control (nm to mm orders), crystal orientation control to (100) or (111) and high impurity doping (>1020 cm−3). These features are useful for improving the performance, productivity and versatility of various devices, such as solar cells, transistors, thermoelectric generators and rechargeable batteries. We briefly review the findings and achievements from over 20 years of LE studies, including recent progress on device applications.

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Section: Grain Size Controlmentioning

confidence: 99%

Metal-induced layer exchange of group IV materials

Toko

Suemasu

2020

J. Phys. D: Appl. Phys.

108

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“…CSL boundaries are mainly twin boundaries of the first order (Σ3), second order (Σ9) and third order (Σ27). 8 As shown in figure 3, regardless of in-situ boron doping time, many low angle grain boundaries and a few twin boundaries such as Σ3, Σ9, and Σ27, which has the low energy level of special boundaries exist for all three samples. 8,9 Average misorientation angle of 5min in-situ boron doping is the smallest among the samples.…”

Section: Resultsmentioning

confidence: 89%

Effects of In Situ Boron Doping in Si Epitaxial Growth on a VIC Processed Poly-Si Seed Layer Using Hot-Wire CVD

Kang¹,

Ahn²,

Lee³

et al. 2011

ECS Trans.

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We investigated the epitaxial growth of large-grained poly-Si film on vapor induced crystallization (VIC) seed layer using hot-wire chemical vapor deposition(HWCVD) for hetero-junction Si solar cells. In this study, p-type poly-Si films were prepared by changing in-situ boron doping time. After epitaxial growth on VIC seed layer, average grain size of about 20 ㎛, are obtained and the crystallographic defects in epitaxial poly-Si layer on VIC seed layer are mainly low angle grain boundaries (LAGB < 2°) and coincident site lattice boundaries (CSL), which are special boundaries of less electrical activity. Moreover, with decreasing insitu boron doping time, mis-orientation angle and in-grain defects in epitaxial Si decrease. Using in-situ boron doping, highly doped p+ back surface field layer was fabricated, and it had high Hall mobility.

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“…High‐resolution EBSD can be used to measure the shapes, sizes, and distribution of cells as small as ~0.2 μm, and a single EBSD map may contain several thousand cells or subgrains. However, EBSD is always used to examine microstructure of alloys and oxide films . Very few EBSD studies for silicon carbide films has been reported in the last 10 yrs, in which only the orientation map was investigated.…”

Section: Introductionmentioning

confidence: 99%

Effect of Pressure on Microstructure of <111>‐Oriented β‐SiC Films: Research via Electron Backscatter Diffraction

Song

Sun

et al. 2015

J. Am. Ceram. Soc.

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Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of <111 > -oriented bSiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (P tot ). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the P tot . The EBSD results indicated that the higher P tot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in b-SiC films.

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EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon

Cited by 23 publications

References 17 publications

Metal-induced layer exchange of group IV materials

Metal-induced layer exchange of group IV materials

Effects of In Situ Boron Doping in Si Epitaxial Growth on a VIC Processed Poly-Si Seed Layer Using Hot-Wire CVD

Effect of Pressure on Microstructure of <111>‐Oriented β‐SiC Films: Research via Electron Backscatter Diffraction

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