Economically detaching transparent and flexible (Al,Ga)N nanowire films with improved photoelectric response in view of ultraviolet photodetectors

Abstract

The (Al,Ga)N nanowire film with good flexibility and transparency has been achieved by a electrochemical procedure with low cost. Detaching such films can enhance the peak responsivity and decrease the decay time of ultraviolet photodetectors.

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

“…That means (In,Ga)N with appropriate In composition can be used for underwater communication. In addition to the extraordinary characteristics of being nontoxic, long lifetime and high stability against radiation and electrochemical (EC) etching [7,8], (In,Ga)N is an ideal material for making photodetectors (PDs) for UWOC applications.…”

“…Compared with thin films or bulk materials, nanostructures such as nanowires (NWs) have the ability to significantly increase the optical absorption and photogenerated carrier density due to the larger surface-to-volume ratio [6,9]. Moreover, NWs have higher transparency compared to the films with the same thickness [7,10]. Up to now, (In,Ga)N material was normally grown on opaque substrates, such as sapphire, Si and SiC, which cannot meet the requirements for transparent devices [7,10], let alone 360 • omnidirectional detection.…”

“…Moreover, NWs have higher transparency compared to the films with the same thickness [7,10]. Up to now, (In,Ga)N material was normally grown on opaque substrates, such as sapphire, Si and SiC, which cannot meet the requirements for transparent devices [7,10], let alone 360 • omnidirectional detection. Therefore, (In,Ga)N NWs are promising but highly challenging to be applied in transparent PDs.…”

“…In another aspect, transparent optoelectronic devices provide many novel functions and have the potential for many applications, such as wearable intelligent electronics, imaging device, etc. [7,10,13]. With the increase in detection demand, omnidirectional detection has become a hot research topic.…”

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

“…17 In our previous work, a UV detector based on (Al,Ga)N nanowires only achieved a single response in the UV range. 18,19 Therefore, the research of (In,Ga)N dual-wavelength detectors is promising but still faces great challenges.…”