ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing

Alluri, P.; Majhi, P.; Tang, Derek; Dey, Satadru

doi:10.1080/10584589808202072

Cited by 11 publications

(5 citation statements)

References 3 publications

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“…In addition, TiO 2 is a constituent of several important multicomponent oxides, such as SrTiO 3 (ST), (Ba,Sr)TiO 3 (BST), Pb(Zr,Ti)O 3 (PZT) for random access memory [6,7]. Because of its great variety of applications, TiO 2 films have been prepared by many physical and chemical deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water

Lim

Kim

2006

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water

Lim

Kim

2006

Thin Solid Films

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“…(6)(7)(8)(9)(10) In addition, TiO 2 is also a constituent of several important multi-metal oxide systems, such as strontium titanates (STOs), barium strontium titanates (BSTs), and lead zirconium titanates (PZTs), for dielectric and ferroelectric applications. (11)(12) Atomic layer deposition (ALD) is the preferred technique for growth of uniform and conformal ultrathin films. (13)(14)(15)(16) Selection of appropriate precursor plays a critical role in the success of final ALD process since high temperature deposition is required, high thermal stability precursors are required as well.…”

Section: Introductionmentioning

confidence: 99%

Advanced Precursor Development for Sr and Ti Based Oxide Thin Film Applications

et al. 2009

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In this work, we evaluated novel Sr and Ti precursors for atomic layer deposition application. Traditional Sr precursor Sr(thd)2 is a solid with very low vapor pressure, high melting point, and requires high temperature oxidation for efficient carbon removal.. In comparison, bulky cyclopentadienyl based Sr compounds display high vapor pressures, low melting points, reactivity with water and high ALD growth rates. We also evaluated the effect of various stabilizing adducts on the properties of Sr cyclopentadienyl precursors and on the SrO ALD process. Sr precursors studied include AbsoluteSr Sr(iPr3Cp)2, HyperSr.THF Sr(iPr3Cp)2.2THF, HyperSr.DME Sr(iPr3Cp)2.DME, StarSr.THF Sr(Me5Cp)2.THF and StarSr.DME Sr(iPr3Cp)2.DME. Novel Ti precursors like PrimeTi (Ti(MeCp)(OMe)3), StarTi (Ti(Me5Cp)(OMe)3), TyALD (TiCp(NMe2)3) and StarTyALD (TiMe5Cp(NMe2)3) developed using heteroleptic chemistry are evaluated for TiO2 ALD. Finally, compatibility of the novel HyperSr.THF along with Ti precursors such as PrimeTi and StarTi in terms of composition tunability and material properties for STO ALD are studied.

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“…Overall, AVD is a pulsed MOCVD method combining basic operation of conventional MOCVD and ALD processes, see Figure 1. Liquid injection CVD and pulsed liquid injection CVD have been described elsewhere (7,8). For our deposition processes we have used a so called Trijet ® vaporizer with several independent injectors for pulsed direct liquid injection of various metal-organic precursors.…”

Section: Methodsmentioning

confidence: 99%

(Invited) Innovative Deposition Technology for Advanced Materials

et al. 2010

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Multi component films for a range of device applications were deposited by atomic vapor deposition (AVD®). Dysprosium doped HfO2 was studied as a high-k material. All HfDyOx films showed a tegragonal/cubic phase. A Dy concentration of 4% was determined for an optimum increase of the k-value. The material GeSbTe was investigated as a possible candidate for phase change applications. The material was deposited in a wide range of compositions in a controlled fashion. In particular the Ge2Sb2Te5 phase was achieved with good composition, thickness and electrical resistivity uniformity. Gap fill and phase change properties were studied.

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ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing

Cited by 11 publications

References 3 publications

Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water

Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water

Advanced Precursor Development for Sr and Ti Based Oxide Thin Film Applications

(Invited) Innovative Deposition Technology for Advanced Materials

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