EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities

Bagraev, N. T.; Mashkov, V. A.; Danilovsky, Eduard; Gehlhoff, W.; Gets, Dmitry; Klyachkin, L. E.; Kudryavtsev, A. A.; Kuzmin, Roman; Malyarenko, A. M.; Romanov, V. V.

doi:10.1007/s00723-010-0141-0

Cited by 22 publications

(27 citation statements)

References 35 publications

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“…The excited triplet states of the negative-U centers were observed firstly by measuring the electron spin resonance angular dependences. It is important that the ESR spectra of the negative-U centers are revealed only after cooling in magnetic fields above critical value of 0.22 T, with persistent behavior in the dependence of temperature variations and crystallographic orientations of magnetic field under cooling procedure [16]. Such persistent behavior of the ESR spectra seems to be evidence of the dynamic magnetic moment due to the arrays of the trigonal dipole boron centers which dominate inside the delta-barriers confining the p-type Si-QW [11,13,16].…”

Section: + -B -mentioning

confidence: 99%

“…It is important that the ESR spectra of the negative-U centers are revealed only after cooling in magnetic fields above critical value of 0.22 T, with persistent behavior in the dependence of temperature variations and crystallographic orientations of magnetic field under cooling procedure [16]. Such persistent behavior of the ESR spectra seems to be evidence of the dynamic magnetic moment due to the arrays of the trigonal dipole boron centers which dominate inside the delta-barriers confining the p-type Si-QW [11,13,16]. The scanning tunneling microscopy (STM), as well as the scanning tunneling spectroscopy, STS, studies showed that the negative-U dipole boron centers are able to form the stripes crystallographically oriented along the [110] axes (Figs.…”

Section: + -B -mentioning

confidence: 99%

“…These characteristics of the 2D gas of holes in the silicon nanosandwiches made it possible for the first time to use the split-gate constriction to study the 0.7(2e 2 /h) fea-ture in the quantum conductance staircase of holes at the temperature of 77 K [11][12][13][14][15][16]. Furthermore, even with small drain-source voltage the electrostatically ordered dipole centres of boron within the delta-barriers appeared to stabilize the formation of the one-dimensional subbands, when the quantum wires are created inside Si-QW using the split-gate technique [11].…”

Section: Quantum Conductance Staircase In Edge Channels Of Silicon Namentioning

confidence: 99%

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High-temperature quantum kinetic effect in silicon nanosandwiches

Bagraev

Grigoryev

Klyachkin

et al. 2017

Low Temperature Physics

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The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high-temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100)

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Section: + -B -mentioning

confidence: 99%

Section: + -B -mentioning

confidence: 99%

Section: Quantum Conductance Staircase In Edge Channels Of Silicon Namentioning

confidence: 99%

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High-temperature quantum kinetic effect in silicon nanosandwiches

Bagraev

Grigoryev

Klyachkin

et al. 2017

Low Temperature Physics

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“…The HTS properties for the δ-barriers have been shown to result from the transfer of the small hole bipolarons through the negative-U dipole centers of boron, which cause the GHz generation under applied voltage or optical pumping [6]. This generation can be enhanced by introducing the internal microcavities in the Si-QW plane by varying the dimensions of the sandwich nanostructure using the photolithography technique.…”

Section: Resultsmentioning

confidence: 99%

Negative-U centers as a basis of topological edge channels

Bagraev¹,

Danilovskii²,

Gehlhoff³

et al. 2014

AIP Conference Proceedings

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Abstract. We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultranarrow silicon quantum well of the p-type (Si-QW), 2 nm, confined by the δ-barriers, 3 nm, heavily doped with boron on the ntype Si (100) surface. The ESR studies show that nanostructured δ-barriers confining the Si-QW consist predominantly of the dipole negative-U centers of boron, which are caused by the reconstruction of the shallow boron acceptors along the <111> crystallographic axis, 2B 0 →B + + B -. The electrically ordered chains of dipole negative-U centers of boron in the δ-barriers appear to give rise to the topological edge states separated vertically, because the value of the longitudinal, G xx = 4e 2 /h, and transversal, G xy = e 2 /h, conductance measured at extremely low drain-source current indicates the exhibition of the Quantum Spin Hall effect. Besides, the Aharonov-Casher conductance oscillations and the "0.7·(2e 2 /h)-feature" obtained are evidence of the interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction that is attributable to the formation of the topological edge channels. We discuss the phenomenological model of the topological edge channel which can demonstrate the ballistic, Aharonov-Chasher effect or Josephson junction behaviour in dependence on the disorder in the distribution of the negative-U dipole centers in the upper and down δ-barriers.

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“…The new EDESR technique used here allows the identification of point and extended defects by measuring the only magnetoresistance without application of an external cavity as well as a hf source and recorder, with internal high frequency generation within frameworks of the normal mode coupling (NMC) caused by the micro cavities embedded in a semiconductor nanostruc ture [6].…”

Section: Introductionmentioning

confidence: 99%

Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

et al. 2015

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We present the first findings of the silicon vacancy related centers identified in the non irradiated 6H SiC nanostructure using the electron spin resonance (ESR) and electrically detected (ED) ESR tech nique. This planar 6H SiC nanostructure represents the ultra narrow p type quantum well confined by the δ barriers heavily doped with boron on the surface of the n type 6H SiC (0001) wafer. The new EDESR tech nique by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency gen eration from the δ barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero field splitting constant D and anisotropic g factor is revealed by the ESR (X band) method. The hyper fine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the 14 N nucleus seem to attribute this triplet center to the N-V Si defect.

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EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities

Cited by 22 publications

References 35 publications

High-temperature quantum kinetic effect in silicon nanosandwiches

High-temperature quantum kinetic effect in silicon nanosandwiches

Negative-U centers as a basis of topological edge channels

Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

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