International Symposium on Quality Electronic Design (ISQED) 2013
DOI: 10.1109/isqed.2013.6523652
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Effect-cause intra-cell diagnosis at transistor level

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Cited by 6 publications
(4 citation statements)
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“…In [48], the authors proposed an intra-cell diagnosis method based on the "Effect-Cause" paradigm aiming at locating the root cause of the observed failures inside a logic cell. It is based on the CPT here applied at transistor level.…”
Section: Intra-cell Diagnosismentioning
confidence: 99%
See 1 more Smart Citation
“…In [48], the authors proposed an intra-cell diagnosis method based on the "Effect-Cause" paradigm aiming at locating the root cause of the observed failures inside a logic cell. It is based on the CPT here applied at transistor level.…”
Section: Intra-cell Diagnosismentioning
confidence: 99%
“…13 sketches the overall diagnosis flow proposed in[48]. First, test patterns are applied to the CUT to distinguish between the correct circuit behavior and the faulty circuit behavior caused by defects.…”
mentioning
confidence: 99%
“…However, an increasing number of defects in circuits fabricated with the most recent manufacturing technologies occur within the logic cell structures. They are called intra-cell or cell-internal defects [1][2][3]. These defects are only covered fortuitously with conventional fault models, and hence not surprisingly, these defects are found to be the root cause of a significant fraction of test escape [4].…”
Section: Introductionmentioning
confidence: 99%
“…Previous works on CA defect test and diagnosis can be classified into two categories. Techniques in the first category extend the application of logic algorithms to deal with transistor defects [1][2]. The main weakness of these techniques is the quality of the logic fault models that do not properly describe the behavior of potential transistor defects.…”
Section: Introductionmentioning
confidence: 99%