Effect of a constant magnetic field on dislocation anharmonicity in silicon

Скворцов, А. А.; Karizin, A. V.; Volkova, L. V.; Koryachko, M. V.

doi:10.1134/s1063783415050273

Cited by 8 publications

(6 citation statements)

References 20 publications

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“…where s T -Soret coefficient [6]. In addition to poor adhesion of the film to the substrate, the thermoelectric properties are affected by the volume defects of the structure.…”

Section: Resultsmentioning

confidence: 99%

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Destruction of Metallization Systems on Silicon From Overheating to Melt Migration

Скворцов¹,

Skvortsov²

2017

Int. J. of Pure and Appl. Math.

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Abstract:The article introduces the analysis of thermal degradation mechanisms related to the heating and melting of metallization system, as well as the contact fusion in transient conditions, and carries out an investigation of the thermal damage of metallization systems under the influence of current pulses. The method of pulse impact on the structure of the metal-semiconductor. The results showed that both thickness and thermal conductivity of the underlayer strongly influence the dynamics of heating of the multilayer system. The results obtained during the experiments show that the various heat-conducting properties of the SiO2 and Si3N4 films are clearly reflected in the connection oscillograms. As a result of defects, a local reduction of the film cross-section leads to an increase in current density, temperature, and consequently, appearance of a local molten area. Electron microscopy confirmed the presence of contact melting at the interface Al-Si. Phase analysis conducted in the border region has shown that the amount of Si impurities in the eutectic makes about 63%. The occurrence of the interface temperature gradients leads to stress, which contributes to the formation of structural defects near the source of thermal shock. The resulting temperature gradient causes the thermoelastic critical condition that could lead to a violation of the adhesion of the metal film, the formation of structural defects and failure of the test compound. The experimental results of thermal degradation of metallization systems, as well as the calculation of physical indicators are described.

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“…where s T -Soret coefficient [6]. In addition to poor adhesion of the film to the substrate, the thermoelectric properties are affected by the volume defects of the structure.…”

Section: Resultsmentioning

confidence: 99%

“…Analyzing the contact pairs with regard to new composition and geometry, one needs to pay attention primarily to the plot λ (∆t 1 ) on a pilot U -shaped curve of reliability [6], which represents the dependence of λ bounce from the time of operation of metallization t.…”

Section: Methodsmentioning

confidence: 99%

Destruction of Metallization Systems on Silicon From Overheating to Melt Migration

Скворцов¹,

Skvortsov²

2017

Int. J. of Pure and Appl. Math.

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“…3. Plasticity of crystals can be changed by MF action before their deformation (i.e., the residual changes initiated by MF remain) [9,10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Static Magnetic Fields on Creep of Aluminum Alloy

Скворцов

Pshonkin

Luk'yanov

et al. 2017

SSP

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The necessity and urgency of studying plastic deformation of metals is determined by both scientific significance of the problem and requirements of practice. So the objective of this work is investigation of aluminum alloy creep under action of static magnetic fields. This subject matter is of practical importance for engineering since the parts of engineering constructions are subject to various loads which may lead to their damage or even creep rupture. Based on the experiments performed by us, it is found that creeping increases under stable magnetic field; the main features appear at the first creep stage. Investigation of these processes will help to predict time dependence of creep strain and its rate as well as durability and plasticity at destruction.

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“…Сьогодні відносно невеликою є кількість досліджень магнітозалежних явищ у кристалах кремнію у порівнянні із іншими слабомагнітними матеріалами, крім того більшість статей присвячені впливу пластичних деформацій на кремній n-типу провідності [12]. Тому актуальними залишаються дослідження по вивченні слабких пружних деформацій та магнітного поля на властивості кристалів p-Si [13,14]. Після дії магнітного поля, положення та величина характерного максимуму на кривих R/R0 = f(σ) залежить від часу, що пройшов від попереднього циклу деформації (рис.…”

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