No abstract

The effect of constant magnetic fields on dislocation anharmonicity of p type silicon single crys tals with a conductivity of 6 Ω cm has been studied. It has been found that preliminary exposure of dislocation silicon (with a dislocation density of 10 4 -10 6 cm -2 ) to a constant magnetic field (B = 0.7 T, t = 30 min) at room temperature causes a change in the nonlinear fourth order elastic modulus β d . The observed changes are associated with the dynamics of magnetosensitive complexes of structural defects and, hence, with the changes in the length of the vibrating dislocation segment. Based on the dynamics of β d (t) after sample expo sure to a magnetic field, the conclusion is made about an increase in the vibrating dislocation segment length L d by 30%, and the characteristic relaxation times of observed effects are estimated.

The paper is devoted to the study of the magnetostimulated dynamics of dislocations in silicon and the influence of electric current on this process. As a result of the conducted studies, it was found that preliminary exposure of n-and p-type silicon single crystals in a constant magnetic field (B = 1 T, exposure time up to 30 minutes) leads to an increase in mobility of dislocation segments in them during plastic deformation of samples (Т=675оС, σ=60–100 MPa, t=45–60 minutes). The quadratic dependence of the dislocation ranges on the induction of a constant magnetic field was found on the samples studied. A decrease in the activation characteristics of the process of displacement of linear defects during the flow of electric current during deformation is also detected: the transmission of electric current helps to reduce the activation energy of the process from 2.2± 0.2 eV to 0.7±0.1 eV. The observed changes are attributed to a decrease in the interaction energy of linear defects with dislocation stoppers based on the dopant.