2009
DOI: 10.1016/j.tsf.2009.01.103
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Effect of a ZnO buffer layer on the characteristics of MgZnO thin films grown on Si (100) substrates by radio-frequency magnetron sputtering

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Cited by 9 publications
(2 citation statements)
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“…The measured thicknesses of the layer of nanosized grains and the amorphous layer were approximately 20 and 10 nm, respectively. The amorphous layer might be SiO 2 formed by the oxidation of Si substrate at the initial stages of the PLD process, as reported in the previous work [27]. Fig.…”
Section: Resultssupporting
confidence: 56%
“…The measured thicknesses of the layer of nanosized grains and the amorphous layer were approximately 20 and 10 nm, respectively. The amorphous layer might be SiO 2 formed by the oxidation of Si substrate at the initial stages of the PLD process, as reported in the previous work [27]. Fig.…”
Section: Resultssupporting
confidence: 56%
“…The ZnO thin films have been prepared by several growth techniques, such as molecular beam deposition (MBE) 4, laser ablation 5, sputtering 6, 7 and metal organic chemical vapor deposition (MOCVD) 8, 9. In this paper, we report a comparative study between three growth techniques for the preparation of ZnO thin films with precise stoichiometric ratios and homogeneous composition distributions on Si(100) oriented substrates and glass corning using the reactive electron beam evaporation, rf magnetron sputtering, and electrostatic spray pyrolysis techniques.…”
Section: Introductionmentioning
confidence: 99%