Effect of Abrasive Particle Size Distribution on Removal Rate of Silicon Wafers

Abstract

The effects of silica abrasives of five different particle sizes (10 nm, 40 nm, 60 nm, 80 nm and 100 nm) on the removal rate of silicon wafers were studied. The experiments were performed under two conditions, by taking the abrasive particles of uniform size and of two different sizes. The mixture of abrasive particles of two sizes increased the removal rate of the silicon wafer, and this improvement was more apparent when 10 nm particles were mixed with any other particle size. According to the stability of the slurry, the size pair of 10 nm and 60 nm presented the optimal result for the particle size mixing of abrasives. The physical model of the abrasive distribution between the silicon wafer and the polishing pad was established. The mechanism of the effect of mixed abrasive on the increase of silicon wafer removal rate was presented. Further, the contact area between the abrasive and silicon wafer was calculated by MATLAB. Based on this, the removal rate of the silicon wafer by the abrasive with mixed-sized particles was predicted with an error value of less than 10%.

The Influence of the Geometry of Movement during the Friction Process on the Change in the Tribological Properties of 30CrNiMo8 Steel in Contact with a G40 Steel Ball

“…The main alloying elements Cr, Ni, Mo, and Mn were evenly distributed on the surface in both cases, and the process did not have a significant effect on the change in their distribution ( Figure 11 e–l). As already mentioned, the occurrence of Si was concentrated in small globular areas ( Figure 11 m,n), which represent small detached abrasive particles, which participated in the further process of increasing the wear of friction pairs [ 44 , 45 ]. The occurrence of C on the surface of the friction surfaces is shown in Figure 11 o,p.…”

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

“…It is widely used in precision manufacturing fields such as optical devices and integrated circuits because of its perfect ability to take into account global planarization, material surface quality, and reliability. There are many factors that affect the polishing performance in CMP, such as abrasives, , additives, working parameters (pressure, temperature, etc. ), , polishing pads, , and so forth.…”

Effect of Alkali Metal Ion on Chemical Mechanical Polishing of LiTaO3

“…CMP is a widely used surface machining method for various materials. [6][7][8] At present, some studies [9][10][11] have focused on CMP processing of LiTaO 3 wafer surface. Hyunseop Lee et al 9 studied the effect of additive citric acid on LiTaO 3 wafer during CMP processing.…”