Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Tanabe, Tadao; Zhao, Shu Yang Frank; Sato, Yohei; Oyama, Yutaka

doi:10.1063/1.4986768

Cited by 23 publications

(14 citation statements)

References 32 publications

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“…As a member of layered van der Waals solids, graphene has many analogues including the family of TMDs which have been conceived and investigated [47][48][49][50][51][52]. Such 2D crystals are formed in an MX 2 type stoichiometry, where M is a transition element from group IV, V, or VI, and X is part of the chalcogen species S, Se, or Te [53].…”

Section: Introductionmentioning

confidence: 99%

Mechanical testing of two-dimensional materials: a brief review

Al-Quraishi

Kauppila

et al. 2020

International Journal of Smart and Nano Materials

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Two-dimensional (2D) materials have dominated nanoscience for the last two decades. Among all 2D materials, graphene, MoS 2 , and h-BN are extremely popular and have been tentatively scaled up to fabricate nanocomposites, energy storage devices, flexible electronics, etc., ex situ and in situ mechanical characterization of 2D crystals can help us understand their mechanical behavior and measure their mechanical properties, which are of great significance in both fundamental science and practical engineering. To date, a great effort has been devoted to both theoretical and experimental mechanics with a focus on unveiling mechanical behaviors and quantifying mechanical properties. Beyond original research, several insightful review works have been published with a specific focus on the mechanics of 2D materials. To have a complementary contribution to the overview of the mechanics of 2D materials, we would like to review the developed experimental techniques being used to mechanically characterize 2D materials. The working mechanism and associated advantages and disadvantages of the techniques will be briefly discussed. Based on the existence of arguments in mechanical properties and behaviors of 2D crystals, and immature mechanical characterization of 2D materials, more intensive and comprehensive studies are expected toward a full understanding of these novel and promising materials.

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Section: Introductionmentioning

confidence: 99%

Mechanical testing of two-dimensional materials: a brief review

Al-Quraishi

Kauppila

et al. 2020

International Journal of Smart and Nano Materials

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“…Formation of interface defects is the typical mechanism by which the elastic stress due to in-plane lattice mismatch relaxes [29,30]. When the film is relaxed, film and substrate no longer share exactly the same in-plane lattice parameter, and Q * = 0 even for the HRs that would be along the specular truncation rod in non-relaxed films.…”

mentioning

confidence: 99%

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Morelhão

Kycia

Netzke

et al. 2018

Applied Physics Letters

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Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.

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“…There is a great deal of interest in the electrical and optical characteristics of 2 dimensional (2D) GaSe, which has a finite energy bandgap. The interlayer van der Waals bonding force of GaSe has been studied [1], as have its uses for spin-field-effect transistors [2] and as a THz wave light source [3].…”

Section: Introductionmentioning

confidence: 99%

In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

et al. 2020

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The growth rate of crystalline GaSe from solution was increased by using indium as a solvent. The solubility and concentration gradient of Se were measured using differential scanning calorimetry (DSC). The Se solubility and the temperature coefficient of the solubility were respectively 15 times and 2.2 times greater in crystals grown from an In flux with GaSe at saturation compared with the case of Se dissolved in a Ga flux. In this study, we succeeded in growing In x Ga 1−x Se ingots from an In flux without the need for a seed crystal, and in increasing the growth rate of GaSe from solution. In addition, we used difference frequency generation to generate THz waves (with a frequency of 9.7 THz) in an In x Ga 1−x Se mixed crystal and investigated the relationship between the output energy of the THz radiation and the interaction length of the excitation light. The conversion efficiency of THz wave (9.7 THz) from the In x Ga 1−x Se mixed crystal with thickness of 860 μm was 26 times greater than that of GaSe crystal with thickness 100 μm grown from Ga solvent.

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Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Cited by 23 publications

References 32 publications

Mechanical testing of two-dimensional materials: a brief review

Mechanical testing of two-dimensional materials: a brief review

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

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Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Cited by 23 publications

References 32 publications

Mechanical testing of two-dimensional materials: a brief review

Mechanical testing of two-dimensional materials: a brief review

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

InxGa1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

Contact Info

Product

Resources

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In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation