Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Morelhão, Sérgio L.; Kycia, S.; Netzke, Samuel; Fornari, Celso I.; Rappl, P. H. O.; Abramof, E.

doi:10.1063/1.5020375

Cited by 14 publications

(26 citation statements)

References 37 publications

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“…Simulated curve for a 13 nm thick MBT film is shown at the bottom (out of vertical scale) as reference for peak positions. A hybrid reflection is seen on all scans (letter h); it is a substrate/film reescattering phenomenon extensively discussed elsewhere[44]. Line profile fitting (yellow lines) by two gaussians of the diffraction peak L6 provide splitting values of ∆Q = 0.15 Å−1 , 0.10 Å−1 , and null for samples S27, S34, and S29, respectively.…”

mentioning

confidence: 67%

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

S.¹,

Fornari²,

Camillo³

et al. 2021

Preprint

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Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi 2 Te 3 . The addition of a third element as in MnBi 2 Te 4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.

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mentioning

confidence: 67%

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

S.¹,

Fornari²,

Camillo³

et al. 2021

Preprint

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“…Numerous works have been carried out to clarify the influence of twinning on properties of topological insulators including stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination and morphology [26][27][28][29][30] .…”

Section: Discussionmentioning

confidence: 99%

Surface phonons in topological insulator Bi2Te3 investigated by Brillouin light scattering

Trzaskowska

Mróz

2020

Sci Rep

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High resolution Brillouin spectroscopy was used for the first time to study the dispersion and anisotropy of surface phonons in the single crystal of topological insulator Bi2Te3. Two surface acoustic waves have been observed, which distinguishes this material from other metals or nontransparent materials. The modes were assigned as Rayleigh waves. The obtained results were then simulated by Finite Element Method. The layered structure of the unit cell proposed in simulation reproduced quite well experimental results of the modes dispersion and anisotropy.

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“…1 This set of recursive equations that become very suitable for layered materials has emerged within a vast effort to advance X-ray diffraction methods for analyzing relevant materials, ranging from nanostructured devices to biological tissues. [5][6][7][8][9][10][11][12]…”

Section: Grazing Incidence X-ray Reflectometrymentioning

confidence: 99%

Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films

S.¹,

Fornari²,

Camillo³

et al. 2021

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Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays tools have been proposed for structural modeling of disordered heterostructures [arxiv.org/abs/2107.12280]. Here, we further evaluate the use of these tools to study the compound Mn x Bi 2 Te 3+x in the grazing incidence region of the reflectivity curves, as well as the effect of thickness fluctuation in the wide angle region.

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Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Cited by 14 publications

References 37 publications

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

Surface phonons in topological insulator Bi2Te3 investigated by Brillouin light scattering

Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films

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