1988
DOI: 10.1016/0040-6090(88)90510-x
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Effect of addition of fluorine to phosphorous-doped tin oxide films

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Cited by 11 publications
(7 citation statements)
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“…SnO 2 has a tetragonal structure, similar to the rutile structure with the wide energy gap of E g = 3.6-4.0 eV and behaves as an n-type semiconductor [13][14][15]. Antimony (Sb), arsenic (As), phosphorus (P), indium (In), molybdenum (Mo), fluorine (F) and chlorine (Cl) have been selected as doping elements for SnO 2 films [16][17][18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…SnO 2 has a tetragonal structure, similar to the rutile structure with the wide energy gap of E g = 3.6-4.0 eV and behaves as an n-type semiconductor [13][14][15]. Antimony (Sb), arsenic (As), phosphorus (P), indium (In), molybdenum (Mo), fluorine (F) and chlorine (Cl) have been selected as doping elements for SnO 2 films [16][17][18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…Many dopants, such as antimony (Sb) [7], arsenic (As) [8], phosphorus (P) [9], molybdenum (Mo) [10], fluorine (F) [11] and chlorine (Cl) [12], have been studied to improve the electrical and optical properties of SnO 2 thin films. Among these, F-or Sb-doped SnO 2 films are the most commonly used transparent conducting oxides (TCOs) in solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…Compared to the more widely used indium tin oxide (ITO), SnO 2 films are inexpensive, chemically stable in acidic and basic solutions, thermally stable in oxidizing environments at high temperatures, and also mechanically strong, which are important attributes for the fabrication and operation of solar cells. Many dopants, such as antimony (Sb), arsenic (As), phosphorus (P), indium (In), molybdenum (Mo), fluorine (F), and chlorine (Cl), have been studied to improve the electrical and optical properties of SnO 2 films [5][6][7][8][9][10][11]. Among these, Sb and F are found to be the most commonly used dopants for photovoltaic devices in terms of a manufacturing point of view.…”
Section: Introductionmentioning
confidence: 99%