Effect of Ag doping on the formation and properties of percolative Ag/BiFeO3 composite thin film by sol–gel method

Xu, Qiankun; Cheng, Shulei; Hao, Xuelin; Wang, Zongrong; Ma, Ning; Du, Piyi

doi:10.1007/s00339-016-0742-z

Cited by 11 publications

(6 citation statements)

References 32 publications

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“…The binding energy of about 531 eV is typical for absorbed hydroxyl groups, whereas the binding energy of about 529 eV is similar to that reported in crystalline perovskite BTO . In the crystalline phase, the absorption O is related to O vacancy in the TiO 6 octahedron . However, for the thin film, if the phase structure does not form well, such as in the amorphous status with significant defects and dangling bonds, the defects, as well as the O vacancies, will form simultaneously .…”

Section: Resultssupporting

confidence: 76%

“…In general, the O vacancies in the crystalline phase are always detected by the XPS spectra of O 1s . As shown in Figure c, two XPS peaks of O 1s can be observed.…”

Section: Resultsmentioning

confidence: 78%

“…In the crystalline phase, the absorption O is related to O vacancy in the TiO 6 octahedron . However, for the thin film, if the phase structure does not form well, such as in the amorphous status with significant defects and dangling bonds, the defects, as well as the O vacancies, will form simultaneously . The hydroxyl groups from the atmosphere will be absorbed by two kinds of absorption centers in this case, and will be detected at about 531 eV in O 1s XPS spectra.…”

Section: Resultsmentioning

confidence: 98%

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Control of Oxygen Vacancies in TiO₆ Octahedra of Amorphous BaTiO₃ Thin Films with Tunable Built‐In Electric Field in a‐BaTiO₃/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Tian

Wang

et al. 2020

Physica Status Solidi (a)

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Amorphous BaTiO 3 (a-BTO) thin films are deposited on p-Si(111) substrates by radio frequency (RF) magnetron sputtering without extra substrate heating. The microstructure of a-BTO thin films is modified by postannealing at low temperatures (260-600 C) in air. The results show that distorted TiO 6 octahedra exist in a-BTO thin films, and the degree of distortion decreases when the annealing temperature rises. The concentration of O vacancies in the TiO 6 of the thin films remains high when postannealed between 370 and 460 C, and a builtin electric field across the a-BTO/p-Si heterojunction is established in this annealing temperature range. This built-in electric field is regulated by controlling the concentration of O vacancies from the TiO 6 . The tunable C-V characteristic of the Au/a-BTO/p-Si metal-oxide-semiconductor (MOS) capacitor is obtained by modulating the built-in electric field at the heterojunction, and the flat band voltage of the MOS capacitor shifts from about À3 V to at least À13 V when the postannealing temperature increases from 260 to 420 C. This kind of tunable built-in electric field at the a-BTO/p-Si heterojunction, controlled by modifying the microstructure of amorphous oxide thin films, has never been observed before, which will be useful for MOS applications.

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Section: Resultssupporting

confidence: 76%

“…In general, the O vacancies in the crystalline phase are always detected by the XPS spectra of O 1s . As shown in Figure c, two XPS peaks of O 1s can be observed.…”

Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 98%

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Control of Oxygen Vacancies in TiO₆ Octahedra of Amorphous BaTiO₃ Thin Films with Tunable Built‐In Electric Field in a‐BaTiO₃/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Tian

Wang

et al. 2020

Physica Status Solidi (a)

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“…Figure S2b shows the high-resolution Fe 2p spectrum. The spectral contributions of Fe 2+ and Fe 3+ are deconvoluted in the Fe 2p spectrum, and the deconvoluted peaks are located at 709.54 and 710.80 eV, respectively, with a ratio of 0.34 . The existence of Fe 2+ implies that a few oxygen vacancies remain in BiFeO 3…”

mentioning

confidence: 99%

“…The spectral contributions of Fe 2+ and Fe 3+ are deconvoluted in the Fe 2p spectrum, and the deconvoluted peaks are located at 709.54 and 710.80 eV, respectively, with a ratio of 0.34. 39 The existence of Fe 2+ implies that a few oxygen vacancies remain in BiFeO 3 . 40 The nitrate electroreduction performance of BiFeO 3 was evaluated on a BiFeO 3 /carbon cloth electrode in a gas-tied Hcell with an electrolyte of 0.1 M KOH containing 0.1 M KNO 3 .…”

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confidence: 99%

Bismuth Ferrite as an Electrocatalyst for the Electrochemical Nitrate Reduction

Wang

et al. 2022

Nano Lett.

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Electrochemical nitrate reduction has become an appealing “waste-to-wealth” approach for sustainable NH3 synthesis owing to its mild operating conditions. However, developing catalysts with high activities and Faradaic efficiencies for this complicated eight-electron reaction is a great challenge. Herein, bismuth ferrite (BiFeO3) flakes, with a distorted perovskite-type structure, are demonstrated to be excellent catalysts for electrochemical NH3 synthesis via nitrate reduction, with a maximum Faradaic efficiency of 96.85%, NH3 yield of 90.45 mg h–1 mgcat –1, at −0.6 V vs. reversible hydrogen electrode. During the nitrate reduction reaction, the crystalline BiFeO3 rapidly converts into an amorphous phase, which is stable in the long term reaction. These results open a new window for rational design of more active and durable electrocatalysts.

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Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping

Akkaya

Şahin

Aydın

et al. 2020

J Mater Sci: Mater Electron

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Effect of Ag doping on the formation and properties of percolative Ag/BiFeO3 composite thin film by sol–gel method

Cited by 11 publications

References 32 publications

Control of Oxygen Vacancies in TiO₆ Octahedra of Amorphous BaTiO₃ Thin Films with Tunable Built‐In Electric Field in a‐BaTiO₃/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Control of Oxygen Vacancies in TiO₆ Octahedra of Amorphous BaTiO₃ Thin Films with Tunable Built‐In Electric Field in a‐BaTiO₃/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Bismuth Ferrite as an Electrocatalyst for the Electrochemical Nitrate Reduction

Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping

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Effect of Ag doping on the formation and properties of percolative Ag/BiFeO3 composite thin film by sol–gel method

Cited by 11 publications

References 32 publications

Control of Oxygen Vacancies in TiO6 Octahedra of Amorphous BaTiO3 Thin Films with Tunable Built‐In Electric Field in a‐BaTiO3/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Control of Oxygen Vacancies in TiO6 Octahedra of Amorphous BaTiO3 Thin Films with Tunable Built‐In Electric Field in a‐BaTiO3/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Bismuth Ferrite as an Electrocatalyst for the Electrochemical Nitrate Reduction

Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping

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Control of Oxygen Vacancies in TiO₆ Octahedra of Amorphous BaTiO₃ Thin Films with Tunable Built‐In Electric Field in a‐BaTiO₃/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Control of Oxygen Vacancies in TiO₆ Octahedra of Amorphous BaTiO₃ Thin Films with Tunable Built‐In Electric Field in a‐BaTiO₃/p‐Si Heterojunction for Metal–Oxide–Semiconductor Applications