Effect of Al Concentration Analyzed by ICP-OES on the Structural, Electrical and Optical Properties of Co-sputtered ZnO:Al Films

Gorgulla, Angelika; Ertel, Dominik P.; Steyer, M.; Hahn, Giso; Terheiden, Barbara

doi:10.1016/j.egypro.2015.07.098

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…Table 2 shows the ICP-MS results of pure ZnO and Cr doped ZnO NPs. As shown in Table 2, there is a very good agreement among the expected chromium percentage using stoichiometry and the actual measured chromium concentration incorporated in the ZnO nanostructures [55].…”

Section: Dopant Concentration Analysissupporting

confidence: 53%

Structural and thermal properties of pure and chromium doped zinc oxide nanoparticles

et al. 2021

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Pure ZnO and Cr-doped ZnO nanoparticles have been synthesized via a facile chemical co-precipitation route and their structural, thermal characteristics were discussed systematically. In the experimental producer, the doping concentration has varied the range, 0.05–0.1 M, while calcined at 600 °C. The influence of Cr-doping on the physical characteristics of ZnO nanoparticles was investigated and addressed. As-prepared samples were analyzed via XRD, FTIR, TGA/DTA, BET, and ICP-MS. XRD analysis shows that ZnO and Cr doped ZnO nanoparticles with average particle sizes between 23 and 39 nm were successfully developed with hexagonal wurtzite structure. The FTIR spectroscopy analysis confirms the existence of chromium in the doped ZnO nanoparticles and the formation of ZnO. The TGA/DTA analysis shows that Cr–ZnO nanoparticles are more thermally stable than ZnO nanoparticles. Moreover, the dopant concentration has been analyzed via ICP-MS and showed a good agreement with the expected chromium concentration. The BET surface area measurement shows that 176.25 m2/g and 287.17 m2/g for un-doped ZnO, and 0.1 M Cr-doped ZnO nanoparticles, respectively. Hence, doping of Cr enhances the surface area and thermal stability. Thus, Cr–ZnO nanoparticles show good thermal stability, and high surface area, which is an excellent characteristices of nanomaterials. Graphic abstract

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Section: Dopant Concentration Analysissupporting

confidence: 53%

Structural and thermal properties of pure and chromium doped zinc oxide nanoparticles

et al. 2021

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“…Prior to Hall effect measurements a UV‐Vis‐NIR spectrophotometer (Agilent Cary 500) was used to carry out normal incident transmission measurements on the ZnO thin films. ICP‐AES (Thermo iCAP 6300) was used to quantitatively determine group III impurity concentrations within the thin films . For this thin films, grown under the same conditions as those for optical transmittance and Hall effect measurements, were dissolved into a 2% HNO 3 solution.…”

Section: Methodsmentioning

confidence: 99%

Optoelectronic properties of doped hydrothermal ZnO thin films

Mughal

Carberry²,

et al. 2017

Physica Status Solidi (a)

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Phone/Fax: þ8565057650Group III impurity doped ZnO thin films were deposited on MgAl 2 O 3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm À1 at 450 nm.

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Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

et al. 2016

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Transparent conductive oxide (TCO) layers, to be implemented in photo-anodes for dye-sensitized solar cells (DSCs), were prepared by co-deposition of ZnO and Al using pulsed-direct current (DC)-magnetron reactive sputtering processes. The films were deposited at low deposition temperatures (RT-188˝C) and at fixed working pressure (1.4 Pa) using soft power loading conditions to avoid intrinsic extra-heating. To compensate the layer stoichiometry, O 2 was selectively injected close to the sample in a small percentage (Ar:O 2 = 69 sccm:2 sccm). We expressly applied the deposition temperature as a controlling parameter to tune the incorporation of the Al 3+ species in the targeted position inside the ZnO lattice. With this method, Aluminum-doped Zinc Oxide films (ZnO:Al) were grown following the typical wurtzite structure, as demonstrated by X-ray Diffraction analyses. A combination of micro-Raman, X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) analyses has shown that the incorporated host-atoms are Al 3+ species in Zn 2+ substitutional position; their amount increases following a direct monotonic trend with the deposition temperature. Correspondently, the c-axis strain into the layer decreases due to the progressive ordering of the lattice structure and reducing clustering phenomena. The maximum average Al content inside the film was~2%, as measured by energy dispersive X-ray (EDX) spectroscopy, with a uniform distribution of the dopant species along the layer thickness traced by depth-profile XPS analyses. The optimised ZnO:Al layer, deposited at a rate of~7 nm/min, exhibits high transmittance in the visible range (~85%) and low resistivity values (~13 mΩˆcm). The material therefore fulfils all the requirements to be candidate as TCO for low-cost DSCs on flexible substrates for large area technologies.

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Effect of Al Concentration Analyzed by ICP-OES on the Structural, Electrical and Optical Properties of Co-sputtered ZnO:Al Films

Cited by 3 publications

References 6 publications

Structural and thermal properties of pure and chromium doped zinc oxide nanoparticles

Structural and thermal properties of pure and chromium doped zinc oxide nanoparticles

Optoelectronic properties of doped hydrothermal ZnO thin films

Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

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