Effect of Al doping on the microstructural, optical and electrical properties of ZnO films

Aghdaee, S.R.; Soleimanian, Vishtasb; Tayebi, B.

doi:10.1016/j.spmi.2011.11.009

Cited by 13 publications

(4 citation statements)

References 39 publications

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“…The widening of optical band gap may be attributed to Moss-Burstein shift [13] . Similar results have been reported previously by Tsay et al [14] and Aghdaee et al [15] . From the measured optical transmittance data, the refractive indices (n) and the extinction coefficients (k) of the deposited films are determined by the method of optical spectrum fitting.…”

Section: ·0190·supporting

confidence: 92%

Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

Zhong

et al. 2016

Optoelectron. Lett.

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The transparent semiconductors of Ti and Ga-incorporated ZnO (TGZO) thin films were prepared by radio frequency (RF) magnetron sputtering onto glass substrates. The effects of discharge power on the physical properties of thin films are studied. Experimental results show that all nanocrystalline TGZO thin films possess preferential orientation along the (002) plane. The discharge power significantly affects the crystal structure and optical properties of thin films. When the discharge power is 200 W, the TGZO thin film has the optimal crystalline quality and optical properties, with the narrowest full width at half-maximum (FWHM) of 1.76×10 -3 rad, the largest average grain size of 82.4 nm and the highest average transmittance of 84.3% in the visible range. The optical gaps of thin films are estimated by the Tauc's relation and observed to increase firstly and then decrease with the increase of the discharge power. In addition, the optical parameters, including refractive index, extinction coefficient, dielectric function and dissipation factor of the thin films, are determined by optical characterization methods. The dispersion behavior of the refractive index is also analyzed using the Sellmeier's dispersion model.Ga-doped ZnO (GZO) is a promising transparent semiconductor film material for applications as transparent electrodes in photovoltaic cells (PVCs) [1] , random access memory (RAM) [2] , superficial acoustic waves [3] , touch screens [4] and gas sensitive devices. Besides high conductivity and optical transmittance in the visible region, the GZO thin films have a lot of advantages, such as non-toxicity, low cost, high abundance and high stability under hydrogen plasma, compared with Sn-doped In 3 O 2 (ITO) thin films. For the preparation of GZO thin films, there are many deposition techniques currently in use, for example, direct-current (DC) magnetron sputtering, radio frequency (RF) magnetron sputtering [5][6][7] , hydrothermal process [8] , molecular beam epitaxy, reactive plasma deposition and pulsed laser ablation (PLA). Among all these methods, conventional RF magnetron sputtering is promising in preparing transparent semiconductor GZO thin films, due to the low cost of the source materials, the high growth rates and the simplicity of the growth process required.In the present study, the transparent semiconductor thin films of Ti-doped GZO (TGZO) were deposited on glass substrates by RF magnetron sputtering technique at different discharge powers. The structural, optical and dielectric properties of the deposited films are studied in detail.Commercial plane glasses (CSG Holding Co., Ltd.) were cut into 30 mm×30 mm plates and used as substrates in this experiment. Prior to their use, the glass substrates were successively washed in an ultrasonic bath with acetone, alcohol and deionized (DI) water, each for 12 min, and then dried in a high-purity nitrogen gas jet. The TGZO transparent semiconductor films were deposited on the previously cleaned glass substrates by RF magnetron sputtering system (KDJ...

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Section: ·0190·supporting

confidence: 92%

Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

Zhong

et al. 2016

Optoelectron. Lett.

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“…If one plots the variations of optical band gap versus crystallite size as well as dislocation density, there is no meaningful correlation between the microstructure and optical band gap. This is in contrast to the inverse square relation between the energy bang gap and crystallite size of transparent conductive oxide materials, reported in several papers [31,32]. The reason of the optical gap behavior is attributed to the decrease in oxygen vacancy, and consequently decreased in carrier concentrations of ITO films.…”

Section: Calculation Of the Optical Band Gapcontrasting

confidence: 63%

Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline $${\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}$$ In 2 O 3 :Sn thin films

Varnamkhasti

Soleimanian

2015

J Mater Sci: Mater Electron

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In this study Sn doped In 2 O 3 (ITO) thin films were deposited on glass substrates by e-beam evaporation technique at different oxygen partial pressure and then were annealed in vacuum at 400 C for 1 h. The effects of oxygen partial pressure on the crystallite size, dislocation density, outer cut-off radius of dislocation, fraction of edge and screw dislocation types, the electrical resistivity, optical transmittance, refractive index, porosity and optical band gap energy were studied. The films deposited at an optimized oxygen partial pressure of 1 Â 10 À4 mbar showed high transparency (88 %) over the visible wavelength region, low electrical resistivity of 3:2 Â 10 À4 X cm and the optical band gap of 3.63(3) eV. It is also observed that the best crystal quality (high crystallite size and low dislocation density) are obtained in partial pressure of 1 Â 10 À4 mbar, indicating the oxygen partial pressure is a key factor in controlling the microstructure, electrical and optical properties of ITO films.

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“…Cb 2 is the average multiplication of dislocation contrast factor and square of the Burgers vector. The detail of this averaging process for hexagonal crystals is not given here, but it has been explained in the paper by Ungar et al [33] and also in our previous works [34,35]. Finally, the effects of planar faults on the shift and broadening of profiles can be modeled by replacing I PD in Eq.…”

Section: Ecmwp Fitting Proceduresmentioning

confidence: 99%

“…〈a〉, 〈c〉 and 〈c þ a〉 were estimated. The details of these procedures are explained in our previous papers [34,35] and not given here. The behavior of these fractions in addition to 〈D V 〉 and ρ against the annealing temperature are summarized in Figs.…”

Section: Microstructure Determinationmentioning

confidence: 99%

The influence of heat treatment on the crystallite size, dislocation density, stacking faults probability and optical band gap of nanostructured cadmium sulfide films

Soleimanian

Saeedi

Mokhtari

2015

Materials Science in Semiconductor Processing

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Effect of Al doping on the microstructural, optical and electrical properties of ZnO films

Cited by 13 publications

References 39 publications

Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline $${\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}$$ In 2 O 3 :Sn thin films

The influence of heat treatment on the crystallite size, dislocation density, stacking faults probability and optical band gap of nanostructured cadmium sulfide films

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