Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD

Bak, So-Young; Mun, Dong-Chan; Jung, Kiro; Park, J. H.; Bae, Hong-Beom; Lee, I. W.; Ha, Jun‐Seok; Jeong, Tak; Oh, Tae-Sung

doi:10.1007/s13391-013-2203-6

Cited by 33 publications

(13 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For epitaxial growth of AlN on (111) Si with trimethylaluminium (TMAl) and NH 3 precursors, some groups have used an Al pre-deposition step using TMAl before AlN growth. [17][18][19] The knowledge of high temperature CVD growth of AlN on (111) Si has been adopted for CVD growth of hBN on (111) Si in this work.…”

mentioning

confidence: 99%

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Ahmed

Dahal

Weltz

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Hexagonal boron nitride (hBN) growth was carried out on (111) Si substrates at a temperature of 1350 C using a cold wall chemical vapor deposition system. The hBN phase of the deposited films was identified by the characteristic Raman peak at 1370 cm À1 with a full width at half maximum of 25 cm À1 , corresponding to the in-plane stretch of B and N atoms. Chemical bonding states and composition of the hBN films were analyzed by X-ray photoelectron spectroscopy; the extracted B/ N ratio was 1.03:1, which is 1:1 within the experimental error. The fabricated metal-hBN-metal devices demonstrate a strong deep UV (DUV) response. Further, the hBN growth on the vertical (111) surfaces of parallel trenches fabricated in (110) Si was explored to achieve a thermal neutron detector. These results demonstrate that hBN-based detectors represent a promising approach towards the development of DUV photodetectors and efficient solid-state thermal neutron detectors.

show abstract

mentioning

confidence: 99%

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Ahmed

Dahal

Weltz

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Since the dislocation density is significantly reduced for the MGaN, the efficient stress release could be attributed to the remission of thermal/ lattice mismatch between the GaN epilayer and sapphire substrate by the MoS 2 insert layer, which is consistent with the previous works about the van der Waals epitaxy of III‐nitrides with graphene as the buffer layer. [ 12–15 ] Besides, the FWHM of MGaN E 2 (High) mode is broad compared to that of the SGaN, proving the unintentional impurities incorporation and enhanced phonon‐defect scattering, which is in accordance with the missing of A 1 (LO) mode in the MGaN.…”

Section: Resultsmentioning

confidence: 61%

“…[ 8 ] Generally, the large stress in III‐nitrides triggers the risk for epilayer crack and the high‐density dislocations act as carrier recombination centers and leakage channels, which would both lower the device performance and degrade its uniformity for the mass production. Traditional buffer layers including low‐temperature aluminium nitride (AlN) nucleation layer, [ 9 ] periodic superlattice structure, [ 10,11 ] and Al metal film [ 12 ] have been widely applied, however, the total residual stress in epitaxial systems remain unchanged. In other words, the mismatch‐induced dislocation and stress are partially confined in the buffer layer, and thus the optimization of crystalline quality and residual stress for III‐nitride epilayers is limited.…”

Section: Introductionmentioning

confidence: 99%

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

Chen

Shi

Zhang

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

is restricted by the intrinsically large lattice and thermal mismatch between the epilayer and foreign substrate, which induces a mass of dislocations and the strong residual stress. [8] Generally, the large stress in III-nitrides triggers the risk for epilayer crack and the high-density dislocations act as carrier recombination centers and leakage channels, which would both lower the device performance and degrade its uniformity for the mass production. Traditional buffer layers including low-temperature aluminium nitride (AlN) nucleation layer, [9] periodic superlattice structure, [10,11] and Al metal film [12] have been widely applied, however, the total residual stress in epitaxial systems remain unchanged. In other words, the mismatch-induced dislocation and stress are partially confined in the buffer layer, and thus the optimization of crystalline quality and residual stress for III-nitride epilayers is limited. Recently, the high-quality and stress-free III-nitrides epitaxy on 2D layers (including h-BN and graphene) are developed, which is socalled as van der Waals epitaxy. [13][14][15] This innovation relies on the excellent stability and weak van der Waals interlayer interaction of 2D insert layers, which fundamentally solves the trouble induced by the heteroepitaxy. As the trade-off, the atomic flatness surface and scarce dangling bonds of h-BN and graphene have made difficulties in III-nitride nucleation. Unless the insert 2D layers are broken or atom-doped by specific treatments, including plasma or in situ nitridation, the epitaxial III-nitride could be in a high crystalline quality with the coalescent surface. [16,17] Apart from the crystalline optimization of III-nitrides, it is known that the typical III-nitride with wurtzite crystalline structure has an inversion symmetry along the c-axis orientation, possessing two opposite polar faces of Ga-polar ([0001] direction) and N-polar ([0001] direction). [18] The spontaneous polarization vector of III-nitride is determined by the polarity orientation, and thus different types of charges would be generated. As a consequence, the optical as well as electrical properties of III-nitride can be adjusted by controlling the polarization orientation. Several works prove that the proper assembly of metal-polar and N-polar III-nitrides could invert High-quality and polarity-controlled III-nitride is crucial for realizing highperformance and new types of device designs with rich functionalities, but there are still many difficulties for obtaining N-polar III-nitrides till now. In this work, the van der Waals epitaxy of high-quality N-polar gallium nitride (GaN) is reported by innovatively inserting a thin MoS 2 layer. Due to the remission of thermal and lattice mismatch by the week van der Waals force in 2D MoS 2 insert layer, the N-polar GaN exhibits high crystalline quality and reduced residual stress. The proposed atom deposition kinetics for the van der Waals epitaxy of the polarity-controlled aluminium nitride nucleation layer and GaN epilayer on the MoS 2 l...

show abstract

“…GaN NPs have been synthesized using different methods [12][13][14][15][16][17][18][19][20][21], which include pyrolysis at high temperature, formation of colloidal GaN quantum dot technique, chemical and combustion methods [22][23][24][25][26][27]. However, most of these methods require high temperature and expensive chemicals for preparation.…”

Section: Introductionmentioning

confidence: 99%

New issue of GaN nanoparticles solar cell

Qaeed

Ibrahim

Saron

et al. 2015

Current Applied Physics

View full text Add to dashboard Cite

Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD

Cited by 33 publications

References 18 publications

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

New issue of GaN nanoparticles solar cell

Contact Info

Product

Resources

About