New issue of GaN nanoparticles solar cell

Qaeed, M.A.; Ibrahim, Kamarulzaman; Saron, K.M.A.; Mukhlif, M.S.; Ismail, Anas; Elfadill, Nezar G.; Chahrour, Khaled M.; Abdullah, Q.N.; Aldroobi, K.S.A.

doi:10.1016/j.cap.2015.02.001

Cited by 12 publications

(4 citation statements)

References 42 publications

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“…The aforementioned techniques and more, some of which require vacuum as a precondition, some of which involve costly chemicals or intense heat. In our earlier research, GaN NPs were successfully produced using a chemical process that was low cost and successful at room temperature (Qaeed et al, 2013a, Qaeed et al, 2015. Due to defects like nitrogen vacancies and oxygen and hydrogen impurities that act as electrons in the electrical polarity of the alloys, high P-type doping in alloys continues to be a difficulty.…”

Section: Introductionmentioning

confidence: 99%

Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application

Qaeed,

Mindil,

Eid

2023

ijmst

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This research was devoted to studying the doping of GaN NPs at low temperature with Mg and the possibility of using them in the p-n junction. This study was subjected to a FESEM, EDX, XRD, PL and Hall Effect examination. The FESEM examination showed clear images of the NPs, the XRD peaks appear at 2? = 32.5, 39.1 and 45.48 which conform the crystalline of p-GaN NPs, Hole Effects measurements confirm the p-GaN with different Mg ratios. The ideality factor and series resistance of p-n junction have been measured.

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Section: Introductionmentioning

confidence: 99%

Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application

Qaeed,

Mindil,

Eid

2023

ijmst

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“…Furthermore, they are valuable materials for fabricating short-wavelength electroluminescence devices due to features such as high breakdown field and carrier mobility, high temperature, chemical stability, and their relative stability even in harsh environments [6]. Due to these qualities, thin films have become one of the essential materials in industrial equipment.…”

Section: Introductionmentioning

confidence: 99%

Synthesized of GaN Nanostructure Using 1064 nm Laser Wavelength by Pulsed Laser Ablation in Liquid

Amir¹,

Fakhri²,

Alwahib³

2022

ETJ

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High-quality GaN nanofilm was prepared by pulsed laser ablation in ethanol.  A new, thin, layer-by-layer preparation factor of GaN nanofilm was used.  The structural properties showed a high and sharp peaks of the hexagonal GaN nanostructure and identical to the conventional structure of the GaN crystal.  The optical properties showed an increase in the reflectivity of the gallium nanoparticles in the UV recovery.  The increase in the optical bandgap energy showed a blueshift related to the size of the GaN nanoparticles grown on a porous silicon substrate.GaN nanostructure was Synthesized using Pulsed laser ablation in liquid ethanol with Nd:YAG laser at pulsed laser ablation energy of 1600 mj and laser wavelength of 1064 nm. The nanoparticle was deposited using the drop cast method on the prepared porous silicon substrate. The structural and optical properties of the prepared GaN were studied. XRD pattern shows a high and sharp peak of pSi peak at 2θ =28.74 reflected from (111) plane and exhibits h-GaN rise at 2θ =34.54, 2θ =37.49, 2θ= 48.19 and 2θ=57.99 which are reflected from ( 002), ( 100), ( 102), ( 110) planes respectively where (002) plane has the highest peak than others. AFM and FESM proved an increase in the grain size of GaN. The reflectance of GaN (81.79%) at the wavelength (306nm) and has an energy band gap of (3.9eV).

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“…1)4) Recently, its utilization as solar cell material is also envisaged. 5) Metal and semiconductor nano-structured materials are recently gaining significant attention because of their size dependent optical, magnetic, and electronic properties. 6), 7) Of these, GaN nano-particles (NPs) are synthesized by multiple methods.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders

Kiyono

Matsuo

Mise

et al. 2020

J. Ceram. Soc. Japan

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Gallium Nitride nano-particles (GaN NPs) are synthesized by a simple nitridation method. A mixture of commercially available ¢-Gallium Oxide (¢-Ga 2 O 3) and GaN powders with about 5¯m particle size was heated at temperatures ranging from 7001,000°C in an ammonia (NH 3) atmosphere for 1 h. In the powder mixture, the ¢-Ga 2 O 3 particles converted to GaN NPs agglomerates, while the GaN particles are slightly grown. When the mixture was heated in the NH 3 atmosphere at 900°C, GaN NPs varying from 30 to 50 nm and microsized GaN particles were obtained.

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New issue of GaN nanoparticles solar cell

Cited by 12 publications

References 42 publications

Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application

Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application

Synthesized of GaN Nanostructure Using 1064 nm Laser Wavelength by Pulsed Laser Ablation in Liquid

Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders

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