Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

Abstract

The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD) grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN) and AlGaN layers (DT-AlGaN) respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET) -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max). Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

“…AlN has also been reported to help reduce current collapse [13]. There are two main methods used for the deposition of AlN namely metal-organic chemical vapor deposition [14] (MOCVD) and plasma-enhanced atomic layer deposition [15,16] (PEALD). However, the growth temperature of MOCVD (>600 • C) is not desirable for the fabrication of AlGaN/GaN HEMTs.…”

The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

“…Experimental investigations of the effects of oxidation on the surface structure and chemical bonding states of AlGaN/GaN heterostructures reveals that the density and distribution surface donor states depend on the condition of oxidation that was explained by the formation of two types of oxide structures providing different types of donor states . On the other hand, it was experimentally found that high‐density 2DEG forms in unoxidized heterostructures in situ passivated by different materials , therefore, the role of oxidation is not yet clarified.…”

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

“…This indicates that the interface states in the AlN layer are not uniformly distributed [45]. A comparison between the minimum Dit values obtained in this study and the values using PEALD AlN [47], [100] and in-situ MOCVD AlN [106], [131] can be seen in Table 5.…”

“…Diamond symbols are single crystal samples measured by Slack et al [103] (in purple), and Rounds et al [104]. Square symbols are a poly-crystalline bulk sample [113] (in green) and various polycrystalline films (grey: Kuo et al [106], purple: Duquenne et al [105], black: Zhao et al [107], red:…”

“…AlN has also been reported to help reduce current collapse [105]. There are two main methods used for the deposition of AlN namely metal-organic chemical vapor deposition (MOCVD) [106] and plasma-enhanced atomic layer deposition (PEALD) [47], [100]. However, the growth temperature of MOCVD (>600 °C) is not desirable for the fabrication of AlGaN/GaN HEMTs.…”