Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

Kim, Dongwoo; Kim, Doo-Hyun; Kim, HyoungJin; So, HyunWook; Hong, MunPyo

doi:10.1016/j.cap.2011.05.021

Cited by 16 publications

(6 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6,7 Recently, OTFTs using SiN x as gate insulator exhibits good properties. 8,9 The vanadyl-phthalocyanine (VOPc) TFTs with SiN x as gate insulator show high reliability in our papers. 10 However, it is difficult to draw unambiguous conclusions as to most properties in the device.…”

mentioning

confidence: 89%

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Wang

Song

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 89%

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Wang

Song

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The compensation effect of N 2 O plasma treatment is better than that of O 2 plasma treatment, which is due to stronger oxidation strength of N 2 O. Regarding to the literature about plasma treatment on TFTs, Kim et al 44 employed NH 3 plasma treatment on the SiN x dielectric in organic TFTs, the effective trap state density can be reduced from 6.48 × 10 11 cm −2 to 4.45 × 10 11 cm −2 . Fan et al 45 carried out N 2 O plasma treatment on the SiO 2 dielectric in pentacene TFTs, the effective trap state density reduced from 1.61 × 10 13 cm −2 to 1.1 × 10 13 cm −2 .…”

Section: Ss = DV G D(log I D ) [1]mentioning

confidence: 99%

Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N₂O Plasma Treated MgO Gate Dielectrics

Chen

Jeng

2013

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

ZnO thin-film transistors (TFTs) using MgO dielectrics achieve a high field-effect mobility of around 50 cm 2 /Vs. Plasma treatments with different gases applied on the MgO dielectric surface will amend the TFT's electrical stability and X-ray photoelectron spectroscopy analysis is done nearby the ZnO/MgO interface to study the change of oxygen chemical bonding states. The results show that MgO dielectric without plasma treatment causes the threshold voltage shift of the transistor, which may be attributed to the migration of oxygen ion toward the ZnO/MgO interface to induce the generation of oxygen vacancies in ZnO active layer when devices are under positive gate bias stress. This instability behavior can be eliminated with N 2 O plasma treatment on MgO. N 2 O plasma treatment inhibits the generation of oxygen vacancies in ZnO against gate bias stress thus reduces the effective trap state density in the subgap of ZnO and thereby enhances the TFT's stability. The detailed scenario for the plasma treatment effect is explored to conclude its mechanism on improving the electrical stability.ZnO is a oxide semiconductor which can be applied to many different electronic devices, such as transparent conducting oxide (TCO), 1,2 light emitting diodes (LED) 3 or resistance random access memory (RRAM). 4,5 Especially, the ZnO-based TFTs 6-11 have attracted attention for application in flat panel display owing to their reasonable mobility and transparency in visible light region. For practical applications, the electrical stability of TFTs will be an important issue to overcome. Bias stress test is a general method to determine the electrical stability of the device by tracing the transfer characteristic (I D -V G curves) of the transistor with giving a constant bias in gate electrode for a period of time. The threshold voltage shift ( V TH ) under gate bias stress is a crucial parameter to determine the electrical stability of TFT devices in active matrix liquid crystal display applications since the bias stress-induced threshold voltage shift leads to a change in the individual pixel brightness. At the same time, V TH that is sensitive to light illumination will limit the TFT application to the next generation of transparent electronics because the exposure of switching TFTs to backlight or ambient light would be inevitable during the operation of the electronics such as display panel. The degradation behaviors of ZnO-based TFTs have been investigated by many previous studies. 12-17 They indicated that the V TH under bias stress or light illumination can be attributed to the charge trapping in the gate insulator or in the active layer/insulator interface, 13-15 and oxygen or water absorption/desorption at back channel. 16,17 In a-Si:H TFTs, the charge trapping sites can be eliminated through an annealing of the a-Si. However, high temperature annealing of ZnO 18 is not suitable for glass substrates owing to their low softening/melting temperatures. 19 An alternative solution for reducing the trapping sites is adding an el...

show abstract

“…Silicon nitride (SiN x ) is a useful material with widespread application in electronic devices such as a gate insulator of thin film transistors, [1][2][3] antireflection and passivation layers for crystalline silicon (c-Si) solar cells, [4][5][6] and gas barrier film for flexible display devices and organic materials, 7) etc. In the field of photovoltaics, SiN x is an important material used to improve the efficiency of c-Si solar cells by decreasing optical loss on the front surface of the devices due to light reflection, and by reducing surface recombination loss on the Si surface.…”

Section: Introductionmentioning

confidence: 99%

Long-term stability of low-temperature deposited Cat-CVD SiN_x thin film against damp-heat stress

Thi Cam Tu,

Ohdaira

2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this paper, we systematically investigated the damp heat (DH) stability of silicon nitride (SiN x ) films formed by catalytic chemical vapor deposition (Cat-CVD) at low substrate temperatures (T sub) of 100–137 °C, aiming at application as a gas barrier and anti-reflection layer of perovskite/silicon tandem solar cells. We have found that the optical properties of the SiN x films such as refractive index and reflection of the films were changed only slightly for < 2% after DH test for >500 days. The Fourier transform infrared (FT-IR) spectroscopy studies demonstrated that the SiN x films were hardly oxidized under DH test for the sample formed at high T sub. A slight oxidization occurs only in the SiN x film formed at a low T sub of 100 °C after DH test for 274 days. These results indicate the high stability of the Cat-CVD SiN x films and their feasibility for application in the surface coating of solar cells.

show abstract

Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

Cited by 16 publications

References 35 publications

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N₂O Plasma Treated MgO Gate Dielectrics

Long-term stability of low-temperature deposited Cat-CVD SiN_x thin film against damp-heat stress

Contact Info

Product

Resources

About

Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

Cited by 16 publications

References 35 publications

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics

Long-term stability of low-temperature deposited Cat-CVD SiN x thin film against damp-heat stress

Contact Info

Product

Resources

About

Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N₂O Plasma Treated MgO Gate Dielectrics

Long-term stability of low-temperature deposited Cat-CVD SiN_x thin film against damp-heat stress