Effect of amorphous Si layer on the reaction of carbon and silicon in the C/Si multilayer by high vacuum annealing

Novel Method Based on Spin-Coating for the Preparation of 2D and 3D Si-Based Anodes for Lithium Ion Batteries

“…As attested by the focus on the 1200-1750 cm −1 range in the Figure 5, the spectra display the carbon D and G band peaks at around 1350 and 1580 cm −1 , respectively. These results are consistent with previous studies [27][28][29][30]. The G-band is characteristic of graphitic sheets, and the D-band is attributed to the presence of defects in the hexagonal graphitic structure.…”

“…For example, the position of the observed peak is centered on (196, 226, and 285) nm after (15,30, and 60) min of sonication, respectively. This leads to a lower main particles diameter value obtained after 15 min, which seems to be much quicker than with the NMP solvent.…”

“…The absence of particle aggregates confirms the good stability of the obtained dispersions and the narrow distribution of the NPs. From these measurements, the position of the peaks are centered on (155, 140, 105, and 123) nm after (15,30,60, and 120) min of sonication, respectively. In fact, DLS results confirm that the ultrasounds allow for the scattering of particles.…”

Forming carbon nanotube composites by directly coating forests with inorganic materials using low pressure chemical vapor deposition

“…Since our CNTs were multi-wall and had defects, this is not unexpected; but it also points out a significant advantage to the LPCVD process. The film grows as part of a thermally induced chemical reaction sequence that initially takes place on the surface of the CNT [25,26]. This reaction sequence occurs by the adsorption of SiH 4 to the CNT surface and subsequent pyrolysis to chemisorbed Si.…”

Effect of microstructure on the mechanical properties of carbon nanofilms deposited on the Si(100) at high temperature under ultra high vacuum

“…The conventional CVD crystalline SiC (c-SiC) film was formed at 1200°C or more [8][9][10][11] while the PVD deposited SiC film was amorphous at lower temperature. Chung and Wu [12] reported that post-annealing threelayer a-Si/C/a-Si structure could reduce the formation temperature of c-SiC together with C and Si to 900 ºC. The high-temperature deposition of film on the Si substrate may change the microstructure.…”