Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells

Abstract

InGaN‐based solar cells have been investigated through fabrication with and without using an indium‐tin‐oxide (ITO) current spreading layer (CSL). For the devices with a planar top surface, utilization of the ITO CSL leads to enhanced performance under 1 sun air‐mass 1.5 global spectrum illumination. In contrast, when surface‐texturing is applied to significantly improve the light absorption, the efficiency of the device without using the ITO CSL is higher compared to the one with the ITO. Furthermore, measurements on reflectance of the corresponding surfaces and transmission of the ITO CSL are carried out. The influence of the ITO CSL has been discussed in terms of surface reflection, the light loss due to the ITO CSL shading and the power loss associated with the absence of the ITO CSL. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect

“…30 Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region. 31 Finger electrodes (Ni/Au 230 nm) were deposited on the ITO, as shown in Figure 1f4. These designs could effectively decrease contact resistance or parasitic resistance of the structure, which leads to the enhancement of carrier collection and the high fill factor (FF).…”

“…Circular ohmic contacts were made by depositing Ti/Al/Ni/Au with an e-beam and annealing at 850 °C for 30 s in a N 2 atmosphere, which is shown in Figure f3 . Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region . Finger electrodes (Ni/Au 230 nm) were deposited on the ITO, as shown in Figure f4.…”