2023
DOI: 10.2139/ssrn.4332444
|View full text |Cite
Preprint
|
Sign up to set email alerts
|

Effect of Annealing Atmosphere on Mgo Thin Film for Tunneling Magnetoresistance Sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2023
2023

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 0 publications
0
1
0
Order By: Relevance
“…[21] This opens up a wide variety of possibilities for its use since it has a high optical bandgap (4-6 eV) allowing for a higher transparency. [22][23][24] MgO has been developed as a thin film using different processes such as spray, [25] sol-gel, [26] sputtering, [27] and chemical vapor deposition [28] techniques. In addition, ALD has been widely used for the growth of MgO thin films since the 1990s due to its precise growth control of conformal and uniform thin films as a result of the selflimiting, surface, and sequential reactions.…”
Section: Introductionmentioning
confidence: 99%
“…[21] This opens up a wide variety of possibilities for its use since it has a high optical bandgap (4-6 eV) allowing for a higher transparency. [22][23][24] MgO has been developed as a thin film using different processes such as spray, [25] sol-gel, [26] sputtering, [27] and chemical vapor deposition [28] techniques. In addition, ALD has been widely used for the growth of MgO thin films since the 1990s due to its precise growth control of conformal and uniform thin films as a result of the selflimiting, surface, and sequential reactions.…”
Section: Introductionmentioning
confidence: 99%