2005
DOI: 10.1063/1.1990250
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Effect of annealing on leakage current in Ba0.5Sr0.5TiO3 and Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films with Pt electrodes

Abstract: Articles you may be interested inDetailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes J. Vac. Sci. Technol. B 31, 01A109 (2013); 10.1116/1.4768791 Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

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Cited by 14 publications
(6 citation statements)
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“…A variation of the Schottky barrier height of 0.5-1.6 eV was found 37,38 and the difference of the φ B,n could be attributed to preparation and subsequent annealing conditions. While after deposition relatively small φ B,n ≈ 0.6 eV are found, an annealing step in an oxygen containing atmosphere leads to an increase in φ B,n to ≈ 1.2 eV 39,7 . In situ photoelectron studies of the contact formation between strontium titanate (STO) and Pt directly after Pt deposition lead to Φ B,n of 0.4-0.6.…”
Section: Discussionmentioning
confidence: 97%
“…A variation of the Schottky barrier height of 0.5-1.6 eV was found 37,38 and the difference of the φ B,n could be attributed to preparation and subsequent annealing conditions. While after deposition relatively small φ B,n ≈ 0.6 eV are found, an annealing step in an oxygen containing atmosphere leads to an increase in φ B,n to ≈ 1.2 eV 39,7 . In situ photoelectron studies of the contact formation between strontium titanate (STO) and Pt directly after Pt deposition lead to Φ B,n of 0.4-0.6.…”
Section: Discussionmentioning
confidence: 97%
“…After Pt deposition on (clean) BST thin films, small Schottky barrier heights are found which can be increased by an annealing step in oxygen. 34,37,38,30 Using I/V measurements, Baniecki et al have determined a Schottky barrier height for the electrons at the Pt/BST interface after Pt deposition of 0.69 eV, which is increased to 1.29 eV after oxygen annealing. The bottom contact, however, shows a high Schottky barrier directly after BST deposition on Pt explaining the asymmetry in Qfactor prior and after annealing in oxygen.…”
Section: Discussionmentioning
confidence: 99%
“…9͒ and not between 0.5 and 1.2 eV, as observed in the current experiment and reported in literature. 6,17,18 Following Fig. 9, a variation in the barrier height between 0.5 and 1.2 eV can occur by a change in doping for a low concentration of interface defects ͑arrow "B" in Fig.…”
Section: B Magnitude Of the Photovoltagementioning
confidence: 92%
“…A dependence of the barrier height on annealing conditions has been derived from electrical measurements. 6,11,17,18 However, the determination of barrier heights from electrical transport studies is not always unique due to the interdependence of parameters, the presence of more than one interface, and only partially known transport properties of the material itself. In addition, the microscopic origin for the variation in the barrier height cannot be accessed from transport studies, however.…”
Section: Introductionmentioning
confidence: 99%