Articles you may be interested inDetailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes J. Vac. Sci. Technol. B 31, 01A109 (2013); 10.1116/1.4768791 Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

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In this work we announce a ferroelectric charge transfer device that uses a high-k buffer layer underneath the ferroelectric layer as a tunnel oxide, where the high electric field required for Fowler-Nordheim charge tunneling through the buffer layer is provided by the polarized ferroelectric. This device exhibits data retention of 10 years at room temperature while retaining the properties of fast write and low voltage operation. Since the electric field across a buffer layer due to the ferroelectric polarization surface charge is ∼E = Pr ε 0 εox then with P r on the order of 10 µC/cm 2 and ε ox for a high k dielectric is ∼20, we have an electric field of 5.6 MV/cm which is sufficient to generate significant tunnel currents across a high-k buffer layer. Charges tunneling from the Si substrate are trapped in the interface between the high-k buffer and the ferroelectric and only detrap thermally; this leads to the long data retention observed on these devices. Despite the fact that charge transfer is accomplished by tunneling, a relatively slow process, this device can be programmed or erased in only the time it takes to switch the ferroelectric, which is of the order of nanoseconds.

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