Effect of annealing on photoluminescence properties of neon implanted GaN

Abstract

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 1014 to 9 × 1015 cm−2 and annealed isochronally at 800 and 900 °C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 °C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 °C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 × 1015 cm−2. The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of VGaON complexes caused by high energy ion implantation.

Red shift of near band edge emission in cerium implanted GaN

“…The NBE features found in the PL spectra of as-grown samples were not seen at their usual energy positions in the spectra of the implanted samples. One may attribute this phenomenon to the quenching of the usual PL features due to the production of non-radiative recombination centres and the appearance of new luminescence lines [21]. However, the following reasons convinced us that the NBE emission features of the implanted samples are the same as those of the as-grown samples but red shifted.…”

Resonant Raman scattering study of V, Cr and Co ions implanted into GaN

“…For investigating the modications in properties of ion implanted GaN, RRS is very helpful characterization tool because variation in intensity and/or position of PL emission is usually observed aer implantation. 14 Besides conventional usage in electronic and optoelectronic applications, realization of GaN based diluted magnetic semiconductor (DMS) has been a prime research interest since Dietl's predictions. 15 In order to dilute the lattice with magnetically active atoms from transition metal (TM) or rare earth series, ion implantation offers robust advantages.…”

Structural characterization of Mn implanted AlInN

“…Group III nitrides have been comprehensively investigated and found to be appropriate materials for meeting the requirements of contemporary electronics and optoelectronic devices. Ion implantation offers a multipurpose tool for structural and optical modifications of semiconductors which cannot be achieved during growth [1,2]. Unlike other nitride alloys, AlInN has not attracted considerable research interest from the implantation point of view, possibly due to its poor crystalline quality, and only a few reports are available in the literature [3,4].…”