Effect of annealing on structural and optical properties of zinc oxide thin film deposited by successive ionic layer adsorption and reaction technique

Ghosh, Arindam; Deshpande, Nishad G.; Gudage, Y.G.; Joshi, Rajesh A.; Sagade, Abhay A.; Phase, D.M.; Sharma, Ramphal

doi:10.1016/j.jallcom.2008.02.061

Cited by 77 publications

(45 citation statements)

References 31 publications

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“…Annealing-induced shifts of the absorption edge energies to lower energies may occur due to the localization of charges in individual nanocrystals and may be attributed to the grain size-dependent properties of the band gap energy. Similar red shifts in band gap energy values for the films with smaller thickness and/ or grain sizes have been reported for chemically deposited thin films [21]. Also, after aging, slight increases are observed at the band gap energies of the samples.…”

Section: Resultssupporting

confidence: 83%

Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

Duman¹,

Güney²

2018

physics

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In this study, zinc oxide (ZnO) thin films are deposited on fluorine doped tin oxide (FTO) substrates by using a successive ionic layer adsorption and reaction (SILAR) method. One of the samples is not annealed and others are annealed at 200, 400 and 600 °C, and all the samples are aged under ultraviolet (UV) light for 19 h.These samples are used to investigate the effect of annealing and aging on the properties of ZnO. Structural properties of the ZnO thin films are examined with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Photoluminescence, transmittance and absorption measurements are used to observe the optical properties of the films. In the literature, there is no study investigating the effect of aging on ZnO thin films deposited with the SILAR method, hence this study fills the gap in the literature.

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Section: Resultssupporting

confidence: 83%

Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

Duman¹,

Güney²

2018

physics

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“…Similar increase of luminescence intensity for the films annealed at higher temperature was reported by Vinodkumar et al for undoped ZnO films prepared by pulsed laser ablation [2]. The intensity ratio between the blue peak (446 nm) and green peak (527 nm) increases from 3.1 to 5.7 after annealing at 800 • C, indicating that the crystal quality of the films can be improved by annealing [35]. The intense PL emission of the films annealed at 800 • C suggests the possibility of the films for application as blue light emitter.…”

Section: Pl Propertiessupporting

confidence: 85%

Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films

Peng

Fang

Yang

et al. 2009

Journal of Alloys and Compounds

119

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“…Additionally, Cao et al reported that the emission at the same wavelength (525 nm) is known to be a deep level emission which is caused by impurities of structural defects in the crystal, such as oxygen vacancies, and zinc interstitials [71][72][73]. This is a result of intrinsic defects within zinc oxide semiconductor nanoparticles [74,75].…”

Section: Methodsmentioning

confidence: 99%

Calcined Solution-Based PVP Influence on ZnO Semiconductor Nanoparticle Properties

et al. 2017

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Abstract:A water-based solution of polyvinylpyrrolidone (PVP) at various concentrations and zinc nitrates were used in conjunction with calcination to produce zinc oxide semiconductor nanoparticles. The extent to which the zinc oxide semiconductor nanoparticles had become crystallized was measured using X-ray diffraction (XRD), whilst morphological characteristics were determined using scanning electron microscopy (SEM). Transmission electron microscopy (TEM) supported by XRD results were used to evaluate the average particle size. Fourier transform infrared spectroscopy (FT-IR) was then carried out in order to identify the composition phase, since this suggested that the samples contained metal oxide bands and that all organic compounds had been effectively removed after calcination. A UV-VIS spectrophotometer was used to determine the energy band gap and illustrate optical features. Additionally, photoluminescence (PL) spectra revealed that the intensity of photoluminescence decreased with a decrease in particle size. The obtained results have mainly been inclusive for uses by several semiconductor applications in different fields, such as environmental applications and studies, since an absorption process for energy wavelengths could efficiently occur.

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Effect of annealing on structural and optical properties of zinc oxide thin film deposited by successive ionic layer adsorption and reaction technique

Cited by 77 publications

References 31 publications

Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films

Calcined Solution-Based PVP Influence on ZnO Semiconductor Nanoparticle Properties

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