2009
DOI: 10.1016/j.jallcom.2009.04.139
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Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films

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Cited by 119 publications
(25 citation statements)
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“…This difference might be because the grain size measured from SEM is the surface morphology instead of the single crystal, and the grain size measured from XRD is single crystal along thickness direction of thin films. Optical band gap of the ZnO thin films can be obtained by applying the following two formulae (4) and (5) [20,21].…”
Section: Resultsmentioning
confidence: 99%
“…This difference might be because the grain size measured from SEM is the surface morphology instead of the single crystal, and the grain size measured from XRD is single crystal along thickness direction of thin films. Optical band gap of the ZnO thin films can be obtained by applying the following two formulae (4) and (5) [20,21].…”
Section: Resultsmentioning
confidence: 99%
“…Zinc oxide (ZnO) is a direct wide band-gap (E g = 3.37 eV) semiconductor with a large exciton binding energy (60 meV) and it is currently attracting worldwide intense interests because of its importance in fundamental studies and its numerous applications especially as optoelectronic materials [1,2]. It has also attracted significant attention as an efficient material for applications in UV light-emitting diodes, laser diodes, varistors and transparent conducting films [3].…”
Section: Introductionmentioning
confidence: 99%
“…The lattice parameters ''a'' and ''c'' are calculated via (002) and (100) orientation using the following relation [24][25]:…”
Section: Structural Propertiesmentioning
confidence: 99%