Electrical and photovoltaic properties of cobalt doped zinc oxide nanofiber/n-silicon diode

Yakuphanoğlu, F.

doi:10.1016/j.jallcom.2010.01.075

Cited by 91 publications

(35 citation statements)

References 22 publications

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“…14 Recently, polymeric Zn, Co, and Ni composite materials have attracted great interest. [15][16][17][18][19][20] In particular, the electrical properties of PVA with different dopant metal ions have attracted attention for device applications. The investigation of electrical and dielectric properties is one of the most convenient and sensitive methods to study polymer structures.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Tunç

Altındal

Dökme

et al. 2010

Journal of Elec Materi

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In this study, the temperature-dependent mean density of interface states ðN SS Þ and series resistance ðR S Þ profiles of Au/PVA (Ni,Zn-doped)/n-Si (111) structures are determined using current-voltage (IÀV) and admittance spectroscopy [capacitance-voltage (C-V) and conductance-voltage G/x-V] methods. The other main electronic parameters such as zero-bias barrier height ðU B0 Þ, ideality factor (n), and doping concentration (N D ) are also obtained as a function of temperature. Experimental results show that the values of U B0 , n, R S , and N SS are strongly temperature dependent. The values of U B0 and R S increase with increasing temperature, while those of n and N SS decrease. The C-V plots of Au/PVA (Ni,Zn-doped)/n-Si(111) structures exhibit anomalous peaks in forward bias (depletion region) at each temperature, and peak positions shift towards negative bias with increasing temperature. The peak value of C has been found to be strongly dependent on N SS , R S , and temperature. The experimental data confirm that the values of N SS , R S , temperature, and the thickness and composition of the interfacial polymer layer are important factors that influence the main electrical parameters of the device.

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Section: Introductionmentioning

confidence: 99%

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Tunç

Altındal

Dökme

et al. 2010

Journal of Elec Materi

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“…where I o is the reverse saturation current given by the following relation [44,45]: Φ is the zero bias effective Schottky barrier height (SBH), q is the electronic charge and n the ideality factor which can be determined accurately from the slope of the linear part of a I ln versus V plot, assuming pure thermionic emission can be obtained from Eq. (1) as…”

Section: Resultsmentioning

confidence: 99%

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Chawanda

Coelho

Auret

et al. 2012

Journal of Alloys and Compounds

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Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process.Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of 500 o C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures.Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (100) system occurs between 600-700 o C.

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“…As it can be seen in Figure 3(a), the values of C increase under illumination. The increase in the capacitance values is due to the generation of more carrier charges in the diodes interface [21]. This behavior may be due to polarization of the O-H chain molecule of PVA in interface polymeric composite layer.…”

Section: Electrical Measurementsmentioning

confidence: 99%

“…The incorporation of metal salts, especially metal chlorides (CoCl 2 , CuCl 2 , and FeCl 3 ), into PVA produced intensity changes in infrared absorption bands of the polymers and resulted in a 10 6 -fold increase in the electrical conductivity of the films [12]. Recently, polymeric Zn, Co and Ni composite materials have attracted large interest [2,[21][22][23][24][25]. In particular, introduction of zinc oxide (ZnO) filler into polymeric matrices can modify the optical (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO is one of the most important materials with wide band gap of 3.22 eV at room temperature and has superior electronic and optical properties. Recently, considerable attention has been focused on Zn composites lowdimensional materials such as nanorods, nanowires, nanofibers and nanobelts [2,21,24]. The electrical and dielectric properties of the metal-semiconductor (MS) diodes with an interfacial polymer layer will be changed under various illumination intensities.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and dielectric properties of polyvinyl alcohol (Co, Zn Acetate) Fiber/n-Si and polyvinyl alcohol (Ni, Zn Acetate)/n-Si Schottky diodes

2011

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Dielectric properties and ac electrical conductivity (σ ac ) of Au/PVA(Co, Zn acetate)/n-Si and Au/PVA(Ni, Zn acetate)/n-Si Schottky diodes (SDs) have been investigated in dark and under illumination by using experimental capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at 1 MHz and room temperature. Experimental results indicate that the change in dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), the real (M') and imaginary (M'') parts of electric modulus and ac electrical conductivity (σ ac ) with illumination were found to change linearly with illumination level (P). On the other hand, the ε', ε'', tanδ and σ ac vs P have positive slope while the M' and M'' vs P have negative slope. Such behavior of dielectric properties and σ ac can be attributed to illumination induced electron-hole pairs under illumination effect in the depletion region of SDs. The obtained results under illumination suggest that these devices can be used as a sensor in optical applications.

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Electrical and photovoltaic properties of cobalt doped zinc oxide nanofiber/n-silicon diode

Cited by 91 publications

References 22 publications

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Preparation and dielectric properties of polyvinyl alcohol (Co, Zn Acetate) Fiber/n-Si and polyvinyl alcohol (Ni, Zn Acetate)/n-Si Schottky diodes

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