Effect of annealing on structural, optical and electrical properties of pulse electrodeposited tin sulfide films

Mathews, Nini Rose; Garcia, Christian C.; Torres, Ildefonso Z.

doi:10.1016/j.mssp.2012.07.003

Cited by 50 publications

(13 citation statements)

References 32 publications

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“…7b. This indicated the presence of Bi 2 S 3 , SnS, and Sn 2 S 3 phases through the Raman bands at 107, 218, and 307 cm -1 , respectively [22][23][24][25], confirming the results of the XRD analysis.…”

Section: Raman Spectroscopysupporting

confidence: 79%

“…This high absorption coefficient suggests that the Sn-Bi-S system may indeed be suitable for the absorber layer in the TFPV devices. The band gap energy was calculated by using the Tauc relation ahm = B(hm -E g ) n [28], where 'h' is the Planck's constant, 'm' is the frequency of incident radiations, 'E g ' is the band gap energy, and 'n' is a constant that depends on the nature of the transition. A direct transition is characterized by n ¼ 1 = 2 , or (ahm) 2 = B(hm -E g ), resulting in a linear relationship between (ahm) 2 and hm.…”

Section: Optical Characterizationmentioning

confidence: 99%

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Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Section: Raman Spectroscopysupporting

confidence: 79%

Section: Optical Characterizationmentioning

confidence: 99%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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“…3c,d), (iii) smaller particle size for UAED-SnS based on XRD calculations due to ultrasonication (it is in agreement with [24]), and (iv) the presence of hot spots generated during the collapse of cavitation [25,26]. The lattice parameters of SnS thin films with orthorhombic structure were calculated by the following formula [27], using the value of (hkl) indexes for the (040), (021), and (111) planes and the d hkl (inter-planar spacing) values:…”

Section: Resultsmentioning

confidence: 85%

Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films

Kafashan

Azizieh

Vatan

2016

Journal of Alloys and Compounds

106

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“…Mathew et al [110] recently reported the DSSCs with an efficiency of 13% by engineering the structure of TiO 2 . In nanostructured materials, the nanoparticles of TiO 2 are predominant in achieving a maximum efficiency attributing to the large surface area of nano particles.…”

Section: Tio2 Films and Nanostructuresmentioning

confidence: 99%