Effect of annealing on the transparent conducting properties of fluorine doped zinc oxide and tin oxide thin films – A comparative study

Low-cost solution-processed copper iodide as an alternative to PEDOT:PSS hole transport layer for efficient and stable inverted planar heterojunction perovskite solar cells

“…The FTO substrates showed strong diffraction peaks at 26.36 , 33.57 , 37.60 , 51.38 , 54.55 , 61.40 , and 65.39 , which can be assigned to the (110), ( 101), ( 200), ( 211), ( 220), (310), and (301) planes of FTO. 45 The diffraction peaks of FTO/PEDOT:PSS substrates are nearly identical to those of FTO substrates because of the amorphous nature of the PEDOT:PSS layer. 46 By contrast, the CuI lms exhibited an intense peak at 25.46 corresponding to the (111) reection of polycrystalline g-phase copper iodide with a zincblende face centered cubic structure.…”

Low-temperature annealed methylammonium-free perovskites prepared under ambient conditions in C electrode-based perovskite solar cells

“…All of the spectra obtained present a distinctive peak at B26.71, which is assigned to the FTO substrate. [43][44][45][46] Considering that the intensity of this peak is the same in all measurements, we have used this peak as a reference to assure the validity of the obtained results (XRD peak origins and intensity). Even though we have used a low-temperature annealing to fabricate the perovskite films (100 1C), the peaks that correspond to the black perovskite phase of Cs x FA 1Àx PbI 3 appear in all the perovskite films under study.…”

High efficiency Cu2ZnSnS4 solar cells over FTO substrates and their CZTS/CdS interface passivation via thermal evaporation of Al2O3

“…The direct comparison of the ITO and FTO layers shows that the former could limit the performance of the solar cells due to a possible diffusion of indium atoms through the absorber layer, and, as a consequence, a degradation of the electrical conductivity of ITO [5,8,9]. On the other hand, FTO showed a high stability up to 500°C before slightly degrading at higher temperatures [10,11]. Mainly, the FTO degradation is ascribed to the diffusion of fluorine atoms to the absorber film, which can be avoided, by adding a molybdenum layer as diffusion barrier, while the Mo reaction with sulfur forms MoS2 [7,11,12].…”