Effect of annealing on the electrical properties of insulating aluminum nitride in MIM and MIS structures

Ortiz, Carlos R.; Pantojas, V.; Otaño-Rivera, W.

doi:10.1016/j.sse.2013.10.013

Cited by 9 publications

(4 citation statements)

References 21 publications

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“…At a smaller ALD-MgO/SL thickness of 2.75 nm, C 0 decreases considerably by 35–50% possibly due to the effect of electron tunneling, which will be discussed later. In contrast, the M/I/M ALD-MgO/WoSL devices show an overall lowering of C 0 by a factor >2 and more significant frequency dependence possibly due to defects initiated at the defective M/I interface Figure b shows variation of ε r with frequency calculated using ε r = C 0 t /ε 0 from the data in Figure a.…”

Section: Resultsmentioning

confidence: 95%

“…In contrast, the M/I/M ALD-MgO/WoSL devices show an overall lowering of C 0 by a factor >2 and more significant frequency dependence possibly due to defects initiated at the defective M/I interface. 50 Figure 2b shows variation of ε r with frequency calculated using ε r = C 0 t/ε 0 from the data in Figure 2a. The ε r shows a similar frequency dependence to that of C 0 , which is almost constant in the frequency range of 1−100 kHz with a small decrease of 4−5%.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Effect of Al₂O₃ Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Acharya

Goul

Romine

et al. 2019

ACS Appl. Mater. Interfaces

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Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range of 2.20−4.40 nm were fabricated using in vacuo sputtering and atomic layer deposition (ALD). In order to achieve a highquality metal/insulator (M/I) interface and hence high-quality dielectric ALD-MgO films, a 5 cycles (∼0.55 nm) thick ALD-Al 2 O 3 seed layer (SL) was employed to demonstrate the dielectric constant (ε r ) is ∼8.82−9.38 in 3.30−4.95 nm thick ALD-MgO/SL films, which is close to that of single-crystal MgO ε r ∼ 9.80. In contrast, a low ε r of 3.55−4.66 for the ALD-MgO films of a similar thickness without a SL was observed. The effective oxide thickness (EOT) of ∼1.40 nm has therefore been achieved in the ultrathin ALD-MgO films, which are comparable to the EOTs of high-K dielectrics such as HfO 2 . In addition, the leakage current through the M/I/M structure is reduced by more than 1 order of magnitude with implementation of the SL. The high leakage current in the samples without a SL can be attributed to the nonuniform nucleation of the ALD-MgO on the Al surface with a significant portion of the Al surface remaining conductive as confirmed using in vacuo scanning tunneling spectroscopy (STS). With the SL, the STS study has confirmed a tunnel barrier height of 1.50 eV on 0.55 nm MgO with 0.55 nm Al 2 O 3 SL with almost 100% coverage. In addition, molecular dynamics simulations point out the importance of deposition of ultrathin SL that has a significant effect on the initial nucleation of the Mg precursor. This result not only illustrates the critical importance of controlling the M/I interface to obtain high-quality dielectric properties of ultrathin ALD films but also provides an approach to engineering incompatible M/I interfaces using a SL for a high-quality dielectric required for applications in M/I/M tunnel junctions and complementary metal oxide semiconductors.

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Section: Resultsmentioning

confidence: 95%

Section: ■ Results and Discussionmentioning

confidence: 99%

Effect of Al₂O₃ Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Acharya

Goul

Romine

et al. 2019

ACS Appl. Mater. Interfaces

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“…The III-V nitride thin films such as gallium nitride (GaN), indium nitride (InN) and aluminum nitride (AIN) have a major potential in the technology of compound semiconductors and electronic/optoelectronic device applications [1][2][3]. Moreover, the III-V nitrides are used as insulator or dielectric materials for metal-insulator/oxide-semiconductor (MIS/MOS) capacitors and MIS/MOS-high electron mobility transistors (MIS/MOS-HEMTs [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…Aluminum nitride (AlN) is one of the significant III-V nitrides due to the electrical properties such as a high dielectric constant, excellent thermal conductivity, high electrical resistivity and wide bandgap [6][7][8]. Therefore, AlN with good dielectric properties are particularly suitable for applications in metal-insulator-metal (MIM) and MIS/MOS devices.…”

Section: Introductionmentioning

confidence: 99%

Properties of AlN thin film as dielectric for Au/Ti/n-Si device

Yıldız¹,

Tataroğlu²

2022

Preprint

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The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on n-Si substrate was deposited by a hydride vapor phase epitaxy (HVPE) technique. Au/Ti contact was thermally evaporated on AlN thin film. Thus, admittance measurements (Y=G+iωC) of the fabricated device were performed and analyzed for frequencies ranging from 1 kHz to 1000 kHz and at room temperature. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics shown a strong frequency dependence. This behavior is associated with the reaction of the interface traps to the applied ac signal. Also, the dielectric parameters, conductivity, and electric modulus of the device were extracted from capacitance and conductance data. The obtained results suggest that the prepared device can be used as a capacitor in electronic circuits.

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Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN

Yıldız

Tataroğlu

2023

J Mater Sci: Mater Electron

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Effect of annealing on the electrical properties of insulating aluminum nitride in MIM and MIS structures

Cited by 9 publications

References 21 publications

Effect of Al₂O₃ Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Effect of Al₂O₃ Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Properties of AlN thin film as dielectric for Au/Ti/n-Si device

Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN

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Effect of annealing on the electrical properties of insulating aluminum nitride in MIM and MIS structures

Cited by 9 publications

References 21 publications

Effect of Al2O3 Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Effect of Al2O3 Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Properties of AlN thin film as dielectric for Au/Ti/n-Si device

Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN

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Product

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Effect of Al₂O₃ Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Effect of Al₂O₃ Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition