Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Rare-earth oxide thin films for gate dielectrics in microelectronics

“…The requirements of the high-k material properties [6] also include stability on silicon, low interface trap densities, and smooth film morphology. It is very likely, that HfO 2 [7], nitrided silicates of hafnium, or HfAlO x [8][9][10] can be applied for the 65-45 nm gate length technologies. However, epitaxy of HfO 2 [11] on Si is unlikely, and low-temperature deposition induces defects due to partial amorphicity and residual contamination.…”

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

“…The series resistance values were calculated from Eq. (16), and the curves of voltage-dependent variation for different frequencies from 10 kHz to 1 MHz were shown in Fig. 8.…”

“…PDA is generally applied after deposition to reduce the number of defects and impurities present in the film. But, it is difficult to form a perfect HfO 2 / Si interface compared to the SiO 2 /Si because Hf-silicate/Hf-O-Si formation and SiO 2 layer generally occurs during the initial stage of the dielectric deposition or after PDA process [6,[13][14][15][16]. Moreover, the phase transition of the HfO 2 film, from amorphous to crystalline, occurs with the increasing in annealing temperature and so, the electrical properties of MOS capacitor such as leakage current, capacitance values, flat band voltage are influenced [9,13].…”

“…The effect of nitrogen (N 2 ) ambient in PDA process on structural characteristic of HfO 2 film has been investigated by several researches [11,13,16]. The results of these studies show that the crystallization temperature of HfO 2 gate dielectric is improved by the nitrogen ambient during PDA process.…”

Statistical modeling of the electrical characteristics for HfO2 thin films grown by MOMBE for high-k dielectric applications

“…Continuous reduction in the gate oxide thickness causes the degradation of the dielectric reliability and the significant increase of gate leakage current (Yeo et al, 2004). Therefore, HfO 2 thin film is currently one of the promising candidates as the solution for the replacement of SiO 2 due to a highdielectric constant material with relatively the high refractive * Corresponding author.…”