Abstract:The effects of annealing on undoped a-Si:H films were studied.Films of a-Si:H were prepared by mercury-sensitized .photochemical vapor deposition, and were annealed immediately. The hydrogen configuration was altered in the annealing process below 200'C, although films were prepared at a substrate temperature of 230°C.At the same time, electron drift mobility greatly increased.These observations indicate a reduction in the number of tail states in the a-Si:H band-gap. Thus the annealing below the substrate tem… Show more
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