2012
DOI: 10.1016/j.cap.2011.10.016
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Effect of annealing temperature on the optical properties of nanosilicon produced from silicon monoxide

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Cited by 20 publications
(35 citation statements)
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“…The stage I is the thermal annealing of the SiO powders at various temperatures T an from 350°C and up to 1100°C. The samples annealed at the stage I were marked as Si350 I , Si900 I , and Si1100 I , respectively (the number indicates the annealing temperature T an , and the upper index indicates that the samples were obtained after the stage I), and the not annealed SiO samples as Si25 (see also [20], which gives a fairly detailed description of the nanosilicon synthesis from SiO).…”
Section: Synthesis Of Silicon Nanoparticlesmentioning
confidence: 99%
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“…The stage I is the thermal annealing of the SiO powders at various temperatures T an from 350°C and up to 1100°C. The samples annealed at the stage I were marked as Si350 I , Si900 I , and Si1100 I , respectively (the number indicates the annealing temperature T an , and the upper index indicates that the samples were obtained after the stage I), and the not annealed SiO samples as Si25 (see also [20], which gives a fairly detailed description of the nanosilicon synthesis from SiO).…”
Section: Synthesis Of Silicon Nanoparticlesmentioning
confidence: 99%
“…To monitor the completeness of the SiO 2 removal, the XRD study of the samples was conducted, which showed the absence of silica after etching in hydrofluoric acid [20]. At the stage III, the procedure of thermally activated hydrosilylation of the nanosilicon particle surface (saturated with the Si-H fragments) was implied, as described in [19,20]. 1-Octadecene was used to obtain hydrophobic nanoparticles.…”
Section: Synthesis Of Silicon Nanoparticlesmentioning
confidence: 99%
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“…The commercial SiO powder precursor used by Liu 27 and Dorofeev 28 were claimed to be amorphous, 30 however, their powder X-ray diffraction (PXRD) results clearly show a crystalline silicon phase prior to any thermal treatment or at very low temperatures (200°C). It is conceivable in this earlier work that the size and yield of the resultant ncSi after thermal annealing would sensitively depend on the presence of the initial ncSi, which could act as nucleation sites as well as possibly influence the thermal disproportionation.…”
Section: Dependence Of Ncsi Formation On Thermal Treatment Temperaturementioning
confidence: 99%
“…27 Dorofeev et al expanded upon this work and reported a maximum PL QY of 12% for ncSi. 28 Recently we successfully synthesized ncSi from SiO at a specific heating temperature of 900°C, the size distribution of which enabled a study on the size dependence of the absolute quantum yield (AQY) on passing from bulk to quantum confined silicon. 29 However, much detailed information about the chemistry during such synthesis was left to be investigated.…”
Section: Introductionmentioning
confidence: 99%