Effect of annealing temperature on structure-property correlations in Zn₂SnO₄ nanostructured films for optoelectronics

Abstract

In the present work, the effect of annealing temperature on structural, optical and electrical properties for sol gel synthesized Zn 2 SnO 4 nanostructured films has been investigated for their suitability in optoelectronics. These samples were probed by using XRD, UV-Visible spectroscopy, photoluminescence spectroscopy and Hall measurements. The x-ray diffraction study divulges the polycrystalline nature and phase transition from cubic inverse spinal Zn 2 SnO 4 phase to pervoskite ZnSnO 3 phase in the synthesized films. The optical transmission of ∼43 %-73 % in the visible region while the optical gap varies from 3.61-3.95 eV has been observed for the annealed films. The defect related emission peaks at 423, 445 and 481 nm has been observed. The lowest electrical resistivity (5.8×10 -3 Ωcm) and highest figure of merit (10 -3 Ω −1 ) for the films annealed at 600°C has been observed. These results are very important for the development of new n-type transparent conductor for various optoelectronic devices.

Novel Highly Dispersed Additive for Proton-Conducting Composites

“…Because of its chemical reactivity, excellent electronic properties, and perovskite structure, ZnSnO 3 is widely used for gas and organic compound sensors [7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Zinc stannates also have numerous applications in electronics, catalysis, and photocatalysis [21][22][23][24][25][26][27].…”