Effect of annealing temperature on electrical stability of radio frequency magnetron sputtered silicon oxides

Abstract

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Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation

“…The silicon film, with a thickness of about 0.5 µm, was crystallized at 1250 • C. The source and drain were formed as described in [15], which was followed by fluorine ion implantation at 35 keV and gate oxide deposition. The gate oxide was deposited in an optimal argon-oxygen gas mixture [9,15]. The fluorine dose and gate oxide thickness were 1 × 10 15 cm −2 and 50 nm, respectively.…”

“…The degradation mechanism of TFTs, in comparison with MOSFETs, may differ because of deposited gate silicon oxide used in TFTs instead of thermal oxide and the presence of passivated dangling bonds in polysilicon. Usually, low pressure chemical deposition [6][7][8] and sputtered gate oxide [9,10] are implemented in TFTs.…”

Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler–Nordheim constant current stress

“…Figs. 5 and 6 point out a commonly observed feature that the increase of positive charge with the electrical stress is associated with more interface states [11,21], which is particularly obvious for non-irradiated oxides.…”

“…In the first case, oxide more sensitive to defect creation is needed to improve sensitivity, while in the latter, oxide more resistant to the damaging effects of irradiation is desirable. There are some publications addressing electrical hardness of sputtered oxide by thermal annealing [11] and by nitridation of sputtered and LPCVD oxides [12,13]. Since in MOS devices electrical hardness correlates well to irradiation hardness it is expected that nitridation of deposited oxide can give irradiation harder oxide films.…”

Characterization of SiGe Thin Films Deposited by RF Magnetron Sputtering for Infrared Imaging Sensor

“…Many researches on SiGe systems have been performed in the 2000s [3][4][5]. In an Si x Ge 1-x O y system, the resistance increases with an increase in the doping of O due to the formation of Si-O.…”