Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

Moditswe, Charles; Muiva, Cosmas M.; Luhanga, P.V.C.; Juma, Albert

doi:10.1016/j.ceramint.2017.01.026

Cited by 28 publications

(20 citation statements)

References 30 publications

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Section: Physical Vapor Depositionmentioning

confidence: 92%

“…[ 34 ] An enlarged grain size was observed at elevated annealing temperatures. [ 83 , 84 ] The highest Hall mobility of 25 cm 2 V −1 s −1 and conductivity of 100 S cm −1 were reported by Cao and co‐workers under the optimized substrate temperature of 120 °C. [ 83 ] For the sputtering technique, nonreactive radio frequency (RF), direct current (DC), and magnetron sputtering proved feasible for depositing CuI thin films.…”

Section: Cui Introduction Deposition Method and Electrical Property Modulationmentioning

confidence: 99%

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Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

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Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.

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Section: Physical Vapor Depositionmentioning

confidence: 92%

Section: Cui Introduction Deposition Method and Electrical Property Modulationmentioning

confidence: 99%

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

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“…[ 7,8 ] Also, the crystallinity of CuI thin films grown by solution or evaporation methods can be significantly improved by thermal annealing. [ 2,9 ] Therefore, the control of growth temperature is expected to play an important role in optimizing the physical properties of sputtered CuI thin films.…”

Section: Figurementioning

confidence: 99%

Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

Benndorf

Jiang

et al. 2020

Physica Rapid Research Ltrs

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Optical absorption and emission spectra are the important quantifiable properties for CuI as a promising optoelectronic material. Previous research on the sputter deposition of CuI focuses on room‐temperature growth. Herein, the effect of growth temperature on the selected optical features of sputtered CuI thin films is investigated. An enhanced visible light transparency and a steeper absorption edge are achieved for CuI thin films by optimizing the growth temperature. The PL intensity ratio of free exciton to defect‐related emission increases with increasing substrate temperature. These results suggest a strategy of growth temperature optimization for the enhanced absorption and emission of CuI for advanced optoelectronic applications.

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“…To date, optoelectronic materials applied in photovoltaic devices have attracted tremendous attention toward settling issues of energy crisis. Copper iodide (CuI) and silver iodide (AgI) have been widely applied as hole transport layers (HTLs) , In addition, they both exhibit α, β, and γ crystalline phases, which transformed with different temperatures. − Moreover, γ-CuI and γ-AgI stable at room temperature can form a continuous solid solution copper silver iodide (Cu x Ag 1– x I) with varying components and a tunable band gap. , Investigations on the surface photovoltage (SPV) and transient SPV (TSPV) have been demonstrated to be critical for understanding carrier dynamics including carrier separation and carrier recombination behaviors for improving the efficiency of photovoltaic devices . Sankapal et al have studied crystal phases of AgI after the transition temperature by SPV spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Significant Enhancement in Optoelectronic Properties of γ-Cu_xAg_1–xI Films Induced by Highly (111)-Preferred Orientation and Cu Content at Room Temperature

Dong

Zhao

Yan

et al. 2021

Crystal Growth & Design

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Crystallographic orientations play a crucial part in optoelectronic properties of crystalline materials. This paper reported significant enhancement of optoelectronic properties in γ-phase copper silver iodide (γ-Cu x Ag 1−x I, 0.6 ≤ x ≤ 0.9) films compared with Cu-poor (0.1 ≤ x ≤ 0.4) counterparts due to highly (111)-preferred orientation and larger grains. Transient surface photovoltage spectroscopy reveals that Cu x Ag 1−x I (0.6 ≤ x ≤ 0.9) exhibits faster transferring rate and slower recombination rate of charge carriers than Cu-poor ones. The preferred orientation significantly influenced the photoelectric properties by reducing photocarrier recombination. In X-ray diffraction patterns and Rietveld results, it was displayed that Cu x Ag 1−x I (x = 0.1−0.9) films exhibit (111)-preferred orientation and higher crystallinity when Cu doping content increased. Scanning electron microscope electron channeling contrast imaging analysis demonstrated (111) with most grains with larger size in Cu-rich films compared with Cu-poor films that were grown in the step flow growth mode from (111)-preferred prisms defined as basic units. This paper may provide a valuable basis for Cu x Ag 1−x I with tunable band gaps, prepared via a simple route of a direct metal surface elemental reaction, applied in the hole transport layer or buffer layer in thin-film solar cells to achieve higher efficiencies.

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Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

Cited by 28 publications

References 30 publications

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

Significant Enhancement in Optoelectronic Properties of γ-Cu_xAg_1–xI Films Induced by Highly (111)-Preferred Orientation and Cu Content at Room Temperature

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Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

Cited by 28 publications

References 30 publications

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

Significant Enhancement in Optoelectronic Properties of γ-CuxAg1–xI Films Induced by Highly (111)-Preferred Orientation and Cu Content at Room Temperature

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Significant Enhancement in Optoelectronic Properties of γ-Cu_xAg_1–xI Films Induced by Highly (111)-Preferred Orientation and Cu Content at Room Temperature