Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2–Si films

Nanoindentation analysis of the pop-in events on SiGe single layer

“…In a previous study, we found that the adhesive strength was related to the thermal treatment temperature and applied critical load to quantify the thermal stability using lateral indentation [7]. Subsequent studies have applied high loading forces of micronewton level in the measurement processes [11][12][13][14]. There is, however, still lack of experimental data on the real pop-in event and no clear explanation of the in epitaxial metastable condition of the SiGe film.…”

Investigations of root strengthening in thermal treated Si0.80Ge0.20 and Si0.75Ge0.25 films

“…It is concluded that the compressed volume is larger because of larger F s , the contact area is thus accessed over the surface of Si 0.80 Ge 0.2 and Si 0.75 Ge 0.25 films. He et al [6][7][8] found that 500-nm-thick Si 0.80 Ge 0.20 epilayers exhibited comparable behavior; they also reported the observation of elastic/plastic contact. Wu et al [11] employed nanoscratch techniques to determine the frictional characteristics of the 200-nm-thick Si 0.80 Ge 0.2 epilayers under various ramping loads and employed AFM to examine their morphologies after scratching [24,25].…”

“…Because efficiency procedures to obtain qualitative elastic/plastic transition, scratch test involves the dynamic motion of a diamond indenter over the coated surface, therefore, is unique technique. The indenter test has been shown to be capable of capturing feasible characters, such as, hardness, Young's modulus, and coefficient of friction of SiGe [6][7][8]. Therefore, in situ captures of plied-up and critical failures from nano-tip are suitable investigation of SiGe films [9][10][11].…”

Effect of nanomechanical and microstructural properties on annealed multilayer Si0·8Ge0·2–Si films

“…From Tételin et al ,27 they suggest that the waved surfaces observed in multilayer films may be due to the two-dimensional germanium segregation on the surface during the growing or annealing process at the temperature of <600°C. He et al 19 have discovered that SiGe multilayer films are subjected to the compression of shear stress emerging at the SiGe multilayer film interface, and the annealing samples under the influence of internal mechanical properties were demonstrated. The observation of dislocation glides for the undergone dislocation nucleation is evidenced.…”

“…– 18 With regard to the restriction of dislocation movement on the inner film, the SiGe multilayer film is desired to make it clearly in the hardness enhancement mechanism. From He et al ,19 high quality relaxed SiGe films are introduced to compare single and multilayers grown epitaxially by ultrahigh vacuum chemical vapour deposition (UHV/CVD) methods. We also study the issue of high annealing temperature (800–1000°C) treatment.…”